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2011 | 120 | 6 | 1043-1046
Article title

Two-Dimensional Analytical Threshold Voltage Modelling of Pseudomorphic Si_{0.8}Ge_{0.2} p-Channel MOSFETs

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EN
Abstracts
EN
In this work we present an analytical model of the threshold voltage of SiGe p-channel metal oxide semiconductor field effect transistor based on the solution of the two-dimensional Poisson's equation and the ground state wave function of Fang and Howard, and taking into account the space charge in the channel and its effect on the surface potential. It is seen that the experimental data are well fitted within the experimental error that shows the appropriateness of the implemented model. Also comparing the calculated results to that of the calculated from the available recent reported models indicates a reasonable improvement to them.
Keywords
EN
Publisher

Year
Volume
120
Issue
6
Pages
1043-1046
Physical description
Dates
published
2011-12
received
2009-04-13
(unknown)
2011-06-10
Contributors
author
  • Department of Physics, Yazd University, P.O. Box 89195-741, Yazd, Iran
References
  • 1. Y.-S. Jean, C.-Y. Wu, IEEE Trans. Electron Dev. 44, 441 (1997)
  • 2. G. Braithwaite, N. Mattey, E.H.C. Parker, T.E. Whall, E. Brunthalter, G. Bauer, J. Appl. Phys. 81, 68531 (1997)
  • 3. S. Kaya, Y.-P. Zhao, J.R. Waiting, A. Asenov, J.R. Barker, G. Ansaripour, G. Braithwaite, T.E. Whall, E.H.C. Parker, Semicond. Sci. Technol. 5, 573 (2000)
  • 4. G. Ansaripour, G. Braithwaite, S. Agan, T.E. Whall, E.H.C. Parker, Microelectron. Eng. 51-52, 541 (2000)
  • 5. G. Ansaripour, Thin Solid Films 517, 6105 (2009)
  • 6. G. Ansaripour, Thin Solid Films 518, 5599 (2010)
  • 7. J.A. Greenfield, R.W. Dutton, IEEE Trans. Electron. Dev. ED-27, 1520 (1980)
  • 8. R.R. Troutman, S.N. Chakravart, IEEE Trans. Cir. Theor. CT-20, 659 (1973)
  • 9. H. Masuda, M. Nakai, R. Hori, M. Kobo, Trans. IEEE Japan 60-C, 205 (1977)
  • 10. S. Baishya, A. Mallik, C.K. Sarkar, Microelectron. Reliability 48, 17 (2008)
  • 11. W. Wu, R. Yao, X. Zheng, Solid-State Electron. 53, 907 (2009)
  • 12. X. Zou, J.P. Xu, C.X. Lee, P.T. Lai, W.B. Chen, Microelectron. Reliability 47, 391 (2007)
  • 13. K.-Y. Lim, X. Zhou, Y. Wang, J. Model. Simul. Microstruct. 2, 51 (1999)
  • 14. G. Ansaripour, Recent Res. Devel. Sci. Tech. Semicond. 1, 51 (2003)
  • 15. D.R. Poole, D.L. Kwong, IEEE Electron. Dev. Lett. EDL-5, 443 (1984)
  • 16. G.P. Kennedy, S. Taylor, W. Eccleston, W.M. Amoldbik, F.H.P.M. Habraken, Microelectron. Eng. 25, 141 (1984)
  • 17. I.S. Goh, J.F. Zhang, S. Hall, W. Eccleston, K. Werner, Semicond. Sci. Technol. 10, 818 (1995)
  • 18. R.J.P. Lander, C.J. Emeleus, B.M. McGregor, E.H.C. Parker, T.E. Whall, A.G.R. Evans, G.P. Kennedy, J. Appl. Phys. 82, 5210 (1997)
  • 19. F.F. Fang, W.E. Howard, Phys. Rev. Lett. 16, 797 (1966)
  • 20. L.D. Yau, Solid-State Electron. 17, 1059 (1974)
  • 21. N.D. Arora, L.M. Richardson, MOSFET Modelling for Circuit Simulation: Advanced Device Physics, Academic Press Inc., New York 1989
  • 22. H.M. Nayfeh, H. Hoyt, D.A. Antoniadis, IEEE Trans. Electron. Dev. 51, 2069 (2004)
  • 23. G. Ansaripour, G. Braithwaite, M. Myronov, O.A. Mironov, E.H.C. Parker, T.E. Whall, Appl. Phys. Lett. 76, 1140 (2000)
  • 24. M.A. Sadeghzadeh, A.I. Horrell, O.A. Mironov, E.H.C. Parker, T.E. Whall, M.J. Kearney, Appl. Phys. Lett. 76, 2568 (2000)
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv120n611kz
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