Self-Compensation Mechanism in Semi-Insulating CdMnTe Crystals Intended for X/γ-Ray Detectors

• Authors: N. Yurtsenyuk , L. Kosyachenko , V. Sklyarchuk , O. Maslyanchuk , O. Sklyarchuk , E. Grushko
• Languages of publication: EN

Abstracts

EN

The electrical properties of single Cd_{1 - x}Mn_{x}Te (x= 0.07 - 0.39) crystals with a resistivity of ≈ 10^8 Ω cm at 300 K have been studied. The electrical conductivity is explained in the terms of statistics of electrons and holes in a semiconductor taking into account the compensation process in impurity-defect complexes. The energy of ionization and the degree of compensation levels have been found.

Keywords

EN

72.20.Fr; 72.80.Ey; 78.20.Ci

Discipline

• 72.80.Ey: III-V and II-VI semiconductors
• 78.20.Ci: Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
• 72.20.Fr: Low-field transport and mobility; piezoresistance

• Journal: Acta Physica Polonica A
• Year: 2011
• Volume: 120
• Issue: 5
• Pages: 957-959

Dates

published

2011-11

Contributors

author

N. Yurtsenyuk

• Optoelectronics Department, Chernivtsi National University, 58012 Chernivtsi, Ukraine

author

L. Kosyachenko

• Optoelectronics Department, Chernivtsi National University, 58012 Chernivtsi, Ukraine

author

V. Sklyarchuk

• Optoelectronics Department, Chernivtsi National University, 58012 Chernivtsi, Ukraine

author

O. Maslyanchuk

• Optoelectronics Department, Chernivtsi National University, 58012 Chernivtsi, Ukraine

author

O. Sklyarchuk

• Optoelectronics Department, Chernivtsi National University, 58012 Chernivtsi, Ukraine

author

E. Grushko

• Optoelectronics Department, Chernivtsi National University, 58012 Chernivtsi, Ukraine

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Identifiers

DOI

10.12693/APhysPolA.120.957