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2011 | 120 | 5 | 957-959
Article title

Self-Compensation Mechanism in Semi-Insulating CdMnTe Crystals Intended for X/γ-Ray Detectors

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EN
Abstracts
EN
The electrical properties of single Cd_{1 - x}Mn_{x}Te (x= 0.07 - 0.39) crystals with a resistivity of ≈ 10^8 Ω cm at 300 K have been studied. The electrical conductivity is explained in the terms of statistics of electrons and holes in a semiconductor taking into account the compensation process in impurity-defect complexes. The energy of ionization and the degree of compensation levels have been found.
Keywords
EN
Contributors
author
  • Optoelectronics Department, Chernivtsi National University, 58012 Chernivtsi, Ukraine
  • Optoelectronics Department, Chernivtsi National University, 58012 Chernivtsi, Ukraine
author
  • Optoelectronics Department, Chernivtsi National University, 58012 Chernivtsi, Ukraine
  • Optoelectronics Department, Chernivtsi National University, 58012 Chernivtsi, Ukraine
author
  • Optoelectronics Department, Chernivtsi National University, 58012 Chernivtsi, Ukraine
author
  • Optoelectronics Department, Chernivtsi National University, 58012 Chernivtsi, Ukraine
References
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Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv120n540kz
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