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Number of results
2011 | 120 | 5 | 933-935
Article title

Mobility of Holes in Nanometer Ge-on-Si p-Type Metal-Oxide-Semiconductor Field-Effect Transistors at Low Temperatures

Content
Title variants
Languages of publication
EN
Abstracts
EN
We investigated magnetoresistance of p-type Ge-on-Si metal-oxide-semiconductor field-effect transistors in order to determine the hole mobility μ as a function of the gate polarization (V_{G}). Measurements were carried out at 4.2 K and magnetic fields up to 10 T. The signal measured was proportional to the derivative of the transistor resistance with respect to V_{G}. To determine the hole mobility we developed a method to treat the measured signal which is based on a numerical solution of a differential equation resulting from the theoretical description of the experimental procedure. As a result, we obtained a non-monotonic μ(V_{G}) dependence which is a characteristic feature of the carrier transport in gated two-dimensional structures.
Keywords
EN
Publisher

Year
Volume
120
Issue
5
Pages
933-935
Physical description
Dates
published
2011-11
Contributors
  • Institute of Experimental Physics, Faculty of Physics, University of Warsaw, Hoża 69, 00-681 Warsaw, Poland
author
  • Imperial College London, Exhibition Road, SW7 2BT London, UK
author
  • IMEC, Kapeldreef 75, 3001 Leuven, Belgium
author
  • IMEC, Kapeldreef 75, 3001 Leuven, Belgium
author
  • IMEC, Kapeldreef 75, 3001 Leuven, Belgium
author
  • IMEC, Kapeldreef 75, 3001 Leuven, Belgium
author
  • IMEC, Kapeldreef 75, 3001 Leuven, Belgium
author
  • Institute of Experimental Physics, Faculty of Physics, University of Warsaw, Hoża 69, 00-681 Warsaw, Poland
  • Institute of Experimental Physics, Faculty of Physics, University of Warsaw, Hoża 69, 00-681 Warsaw, Poland
References
  • 1. Y.M. Meziani, J. Łusakowski, W. Knap, N. Dyakonova, F. Teppe, K. Romanjek, M. Ferrier, R. Clerc, G. Ghibaudo, F. Boeuf, T. Skotnicki, J. Appl. Phys. 96, 5761 (2004)
  • 2. A C. Beer, Solid State Phys. Supplement 4 (1963)
  • 3. R. Tauk, J. Łusakowski, W. Knap, Z. Bougrioua, M. Azize, P. Lorenzini, M. Sakowicz, K. Karpierz, C. Fenouillet-Beranger, M. Casse, C. Gallon, F. Boeuf, T. Skotnicki, J. Appl. Phys. 102, 103701 (2007)
  • 4. J. Łusakowski, W. Knap, Y. Meziani, J.-P. Cesso, A. El Fatimy, R. Tauk, N. Dyakonova, G. Ghibaudo, F. Boeuf, T. Skotnicki, Appl. Phys. Lett. 87, 053507 (2005)
  • 5. M. Sakowicz, J. Łusakowski, K. Karpierz, M. Grynberg, B. Majkusiak, Appl. Phys. Lett. 90, 172104 (2007)
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv120n533kz
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