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2011 | 120 | 5 | 927-929
Article title

Terahertz Photovoltaic Response of Si-MOSFETs: Spin Related Effect

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EN
Abstracts
EN
We report on investigations of photovoltaic response of Si-MOSFETs subjected to terahertz radiation in high magnetic fields. Then a DC drain-to-source voltage is developed that shows singularities in magnetic fields corresponding to paramagnetic resonance conditions. These singularities are investigated as a function of incident frequency, temperature and two-dimensional carrier density. We tentatively attribute these resonances to spin transitions of the electrons bound to Si dopants and discuss the possible physical mechanism of the photovoltaic signal generation.
Keywords
EN
Publisher

Year
Volume
120
Issue
5
Pages
927-929
Physical description
Dates
published
2011-11
Contributors
author
  • GES-UMR5650, Université Montpellier 2 and CNRS, 34095 Montpellier, France
author
  • GES-UMR5650, Université Montpellier 2 and CNRS, 34095 Montpellier, France
author
  • GES-UMR5650, Université Montpellier 2 and CNRS, 34095 Montpellier, France
author
  • GES-UMR5650, Université Montpellier 2 and CNRS, 34095 Montpellier, France
author
  • GES-UMR5650, Université Montpellier 2 and CNRS, 34095 Montpellier, France
author
  • GES-UMR5650, Université Montpellier 2 and CNRS, 34095 Montpellier, France
author
  • Institute of Experimental Physics, Warsaw University, Warsaw, Poland
  • Institute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland
author
  • Institute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland
author
  • Institute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland
References
  • 1. R. Tauk, F. Teppe, S. Boubanga, D. Coquillat, W. Knap, Y.M. Meziani, C. Gallon, F. Boeuf, T. Skotnicki, C. Fenouillet-Beranger, D.K. Maude, S. Rumyantsev, M.S. Shur, Appl. Phys. Lett. 89, 253511 (2006)
  • 2. W. Knap, F. Teppe, Y. Meziani, N. Dyakonova, J. Lusakowski, F. Boeuf, T. Skotnicki, D. Maude, S. Rumyantsev, M.S. Shur, Appl. Phys. Lett. 85, 675 (2004)
  • 3. W. Stillman, M.S. Shur, D. Veksler, S. Rumyantsev, F. Guarin, Electron. Lett. 43, 422 (2007)
  • 4. M. Dyakonov, M. Shur, IEEE Trans. Electron Dev. 43, 380 (1996)
  • 5. E. Ojefors, U.R. Pfeiffer, A. Lisauskas, H.G. Roskos, IEEE J. Solid-State Circuits 44, 1968 (2009)
  • 6. M.B. Lifshits, M.I. Dyakonov, Phys. Rev. B 80, 121304(R) (2009)
  • 7. S. Boubanga-Tombet, M. Sakowicz, D. Coquillat, F. Teppe, N. Dyakonova, W. Knap, K. Karpierz, J. Łusakowski, Appl. Phys. Lett., 95, 072106 (2009)
  • 8. O.A. Klimenko, Yu.A. Mityagin, H. Videlier, F. Teppe, N.V. Dyakonova, C. Consejo, S. Bollaert, V.N. Murzin, W. Knap, Appl. Phys. Lett 97, 022111 (2010)
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv120n531kz
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