Terahertz Photovoltaic Response of Si-MOSFETs: Spin Related Effect

• Authors: H. Videlier , N. Dyakonova , F. Teppe , C. Consejo , B. Chenaud , W. Knap , J. Lusakowski , D. Tomaszewski , J. Marczewski , P. Grabiec
• Languages of publication: EN

Abstracts

EN

We report on investigations of photovoltaic response of Si-MOSFETs subjected to terahertz radiation in high magnetic fields. Then a DC drain-to-source voltage is developed that shows singularities in magnetic fields corresponding to paramagnetic resonance conditions. These singularities are investigated as a function of incident frequency, temperature and two-dimensional carrier density. We tentatively attribute these resonances to spin transitions of the electrons bound to Si dopants and discuss the possible physical mechanism of the photovoltaic signal generation.

Keywords

EN

85.30.Tv

Discipline

• 85.30.Tv: Field effect devices

• Journal: Acta Physica Polonica A
• Year: 2011
• Volume: 120
• Issue: 5
• Pages: 927-929

Dates

published

2011-11

Contributors

author

H. Videlier

• GES-UMR5650, Université Montpellier 2 and CNRS, 34095 Montpellier, France

author

N. Dyakonova

• GES-UMR5650, Université Montpellier 2 and CNRS, 34095 Montpellier, France

author

F. Teppe

• GES-UMR5650, Université Montpellier 2 and CNRS, 34095 Montpellier, France

author

C. Consejo

• GES-UMR5650, Université Montpellier 2 and CNRS, 34095 Montpellier, France

author

B. Chenaud

• GES-UMR5650, Université Montpellier 2 and CNRS, 34095 Montpellier, France

author

W. Knap

• GES-UMR5650, Université Montpellier 2 and CNRS, 34095 Montpellier, France

author

J. Lusakowski

• Institute of Experimental Physics, Warsaw University, Warsaw, Poland

author

D. Tomaszewski

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland

author

J. Marczewski

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland

author

P. Grabiec

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland

References

• 1. R. Tauk, F. Teppe, S. Boubanga, D. Coquillat, W. Knap, Y.M. Meziani, C. Gallon, F. Boeuf, T. Skotnicki, C. Fenouillet-Beranger, D.K. Maude, S. Rumyantsev, M.S. Shur, Appl. Phys. Lett. 89, 253511 (2006)
• 2. W. Knap, F. Teppe, Y. Meziani, N. Dyakonova, J. Lusakowski, F. Boeuf, T. Skotnicki, D. Maude, S. Rumyantsev, M.S. Shur, Appl. Phys. Lett. 85, 675 (2004)
• 3. W. Stillman, M.S. Shur, D. Veksler, S. Rumyantsev, F. Guarin, Electron. Lett. 43, 422 (2007)
• 4. M. Dyakonov, M. Shur, IEEE Trans. Electron Dev. 43, 380 (1996)
• 5. E. Ojefors, U.R. Pfeiffer, A. Lisauskas, H.G. Roskos, IEEE J. Solid-State Circuits 44, 1968 (2009)
• 6. M.B. Lifshits, M.I. Dyakonov, Phys. Rev. B 80, 121304(R) (2009)
• 7. S. Boubanga-Tombet, M. Sakowicz, D. Coquillat, F. Teppe, N. Dyakonova, W. Knap, K. Karpierz, J. Łusakowski, Appl. Phys. Lett., 95, 072106 (2009)
• 8. O.A. Klimenko, Yu.A. Mityagin, H. Videlier, F. Teppe, N.V. Dyakonova, C. Consejo, S. Bollaert, V.N. Murzin, W. Knap, Appl. Phys. Lett 97, 022111 (2010)

Identifiers

DOI

10.12693/APhysPolA.120.927