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We report on investigations of photovoltaic response of Si-MOSFETs subjected to terahertz radiation in high magnetic fields. Then a DC drain-to-source voltage is developed that shows singularities in magnetic fields corresponding to paramagnetic resonance conditions. These singularities are investigated as a function of incident frequency, temperature and two-dimensional carrier density. We tentatively attribute these resonances to spin transitions of the electrons bound to Si dopants and discuss the possible physical mechanism of the photovoltaic signal generation.
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927-929
Physical description
Dates
published
2011-11
Contributors
author
- GES-UMR5650, Université Montpellier 2 and CNRS, 34095 Montpellier, France
author
- GES-UMR5650, Université Montpellier 2 and CNRS, 34095 Montpellier, France
author
- GES-UMR5650, Université Montpellier 2 and CNRS, 34095 Montpellier, France
author
- GES-UMR5650, Université Montpellier 2 and CNRS, 34095 Montpellier, France
author
- GES-UMR5650, Université Montpellier 2 and CNRS, 34095 Montpellier, France
author
- GES-UMR5650, Université Montpellier 2 and CNRS, 34095 Montpellier, France
author
- Institute of Experimental Physics, Warsaw University, Warsaw, Poland
author
- Institute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland
author
- Institute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland
author
- Institute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland
References
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Publication order reference
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YADDA identifier
bwmeta1.element.bwnjournal-article-appv120n531kz