Terahertz Photovoltaic Response of Si-MOSFETs: Spin Related Effect

H. Videlier; N. Dyakonova; F. Teppe; C. Consejo; B. Chenaud; W. Knap; J. Lusakowski; D. Tomaszewski; J. Marczewski; P. Grabiec

doi:10.12693/APhysPolA.120.927

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Acta Physica Polonica A

2011 | 120 | 5 | 927-929

Article title

Terahertz Photovoltaic Response of Si-MOSFETs: Spin Related Effect

Authors

H. Videlier , N. Dyakonova , F. Teppe , C. Consejo , B. Chenaud , W. Knap , J. Lusakowski , D. Tomaszewski , J. Marczewski , P. Grabiec

Content

http://przyrbwn.icm.edu.pl/APP/PDF/120/a120z5p31.pdf [remote]

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Abstracts

We report on investigations of photovoltaic response of Si-MOSFETs subjected to terahertz radiation in high magnetic fields. Then a DC drain-to-source voltage is developed that shows singularities in magnetic fields corresponding to paramagnetic resonance conditions. These singularities are investigated as a function of incident frequency, temperature and two-dimensional carrier density. We tentatively attribute these resonances to spin transitions of the electrons bound to Si dopants and discuss the possible physical mechanism of the photovoltaic signal generation.

Keywords

85.30.Tv

Publisher

Institute of Physics, Polish Academy of Sciences

Journal

Acta Physica Polonica A

Year

2011

Volume

120

Issue

Pages

927-929

Physical description

Dates

published

2011-11

References

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8. O.A. Klimenko, Yu.A. Mityagin, H. Videlier, F. Teppe, N.V. Dyakonova, C. Consejo, S. Bollaert, V.N. Murzin, W. Knap, Appl. Phys. Lett 97, 022111 (2010)

Document Type

Publication order reference

YADDA identifier

bwmeta1.element.bwnjournal-article-appv120n531kz

Identifiers

DOI

10.12693/APhysPolA.120.927