Absorption and Emission Properties of Light Emitting Diode Structures Containing GaInN/GaN QWs

• Authors: J. Binder , K. Korona , J. Borysiuk , A. Wysmołek , M. Baeumler , K. Köhler , L. Kirste
• Languages of publication: EN

Abstracts

EN

In this work we present measurements of GaInN/GaN light emitting diodes (LEDs) with an active layer consisting of three quantum wells made of Ga_{0.9}In_{0.10}N that have different widths (1.8 nm, 2.7 nm, 3.7 nm). A comparison of emission and absorption (photocurrent) on the same sample revealed a shift in energy, with the emission energy being significantly lower. The shifts are about 0.02 eV, 0.03 eV, and 0.04 eV for the quantum wells having the widths of 1.8 nm, 2.7 nm, and 3.7 nm, respectively. This can be explained by a shift of the ground state energy caused by the quantum confined Stark effect. Calculations show that due to the spontaneous polarization and the piezoelectric effect a strong electric field of the order of 1 MV/cm was present in the GaInN quantum wells. Simulations of ground-state energies in the model of an infinite square well under the influence of an electric field with a matched effective well width were performed and used to interpret the experimental results.

Keywords

EN

78.55.Cr; 72.40.+w; 73.61.Ey

Discipline

• 78.55.Cr: III-V semiconductors
• 73.61.Ey: III-V semiconductors
• 72.40.+w: Photoconduction and photovoltaic effects

• Journal: Acta Physica Polonica A
• Year: 2011
• Volume: 120
• Issue: 5
• Pages: 918-920

Dates

published

2011-11

Contributors

author

J. Binder

• Faculty of Physics, University of Warsaw, Hoża 69, 00-681 Warsaw, Poland

author

K. Korona

• Faculty of Physics, University of Warsaw, Hoża 69, 00-681 Warsaw, Poland

author

J. Borysiuk

• Faculty of Physics, University of Warsaw, Hoża 69, 00-681 Warsaw, Poland

author

A. Wysmołek

• Faculty of Physics, University of Warsaw, Hoża 69, 00-681 Warsaw, Poland

author

M. Baeumler

• Fraunhofer Institute for Applied Solid State Physics, Tullastr. 72, 79108 Freiburg, Germany

author

K. Köhler

• Fraunhofer Institute for Applied Solid State Physics, Tullastr. 72, 79108 Freiburg, Germany

author

L. Kirste

• Fraunhofer Institute for Applied Solid State Physics, Tullastr. 72, 79108 Freiburg, Germany

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Identifiers

DOI

10.12693/APhysPolA.120.918