Microwave Techniques Investigations of ZnCoO Films Grown by Atomic Layer Deposition

• Authors: M. Łukasiewicz , A. Cabaj , M. Godlewski , E. Guziewicz , A. Wittlin , M. Jaworski , A. Wołoś , Z. Wilamowski
• Languages of publication: EN

Abstracts

EN

Electrical and magnetic properties of ZnCoO thin films grown on silicon substrates by atomic layer deposition method are investigated. The films were grown using reactive organic precursors of zinc and cobalt. The use of these precursors allowed us the significant reduction of a growth temperature to 200°C and below, which proved to be very important for the growth of uniform films of ZnCoO. We have measured the microwave AC conductivity and EPR for two types of ZnCoO samples, with different Co fractions.

Keywords

EN

68.55.Ln; 68.55.Nq; 78.66.Hf; 81.15.Kk

Discipline

• 78.66.Hf: II-VI semiconductors
• 68.55.Nq: Composition and phase identification
• 68.55.Ln: Defects and impurities: doping, implantation, distribution, concentration, etc.(for diffusion of impurities, see 66.30.J-)
• 81.15.Kk: Vapor phase epitaxy; growth from vapor phase

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2011
• Volume: 120
• Issue: 5
• Pages: 911-913

Dates

published

2011-11

Contributors

author

M. Łukasiewicz

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

author

A. Cabaj

• Dept. of Mathematics and Natural Sciences College of Science, Cardinal S. Wyszyński University, Dewajtis 5, 01-815 Warsaw, Poland

author

M. Godlewski

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland
• Dept. of Mathematics and Natural Sciences College of Science, Cardinal S. Wyszyński University, Dewajtis 5, 01-815 Warsaw, Poland

author

E. Guziewicz

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

author

A. Wittlin

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

author

M. Jaworski

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

author

A. Wołoś

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

author

Z. Wilamowski

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland
• Faculty of Mathematics and Computer Sciences, UWM, Olsztyn, Poland

References

• 1. T. Dietl, H. Ohno, F. Matsukura, J. Cibert, D. Ferrand, Science 287, 1019 (2000)
• 2. K. Sato, H. Katayama-Yoshida, Jpn. J. Appl. Phys. 39, L555 (2000)
• 3. K. Ueda, H. Tabata, T. Kawai, Appl. Phys. Lett. 79, 988 (2001)
• 4. A. Ney, K. Ollefs, S. Ye, T. Kammermeier, V. Ney, T.C. Kaspar, S.A. Chambers, F. Wilhelm, A. Rogalev, Phys. Rev. Lett. 100, 157201 (2008)
• 5. J.M.D. Coey, Kwanruthai Wongsaprom, J. Alaria, M. Venkatesan, J. Phys. D, Appl. Phys. 41, 134012 (2008)
• 6. A.J. Behan, A. Mokhtari, H.J. Blythe, D. Score, X.-H. Xu, J.R. Neal, A.M. Fox, G.A. Gehring, Phys. Rev. Lett. 100, 047206 (2008)
• 7. M. Godlewski, E. Guziewicz, M.I. Łukasiewicz, I.A. Kowalik, M. Sawicki, B.S. Witkowski, R. Jakieła, W. Lisowski, J.W. Sobczak, M. Krawczyk, Phys. Status Solidi B 248, 1596 (2011)
• 8. J.H. Park, M.G. Kim, H.M. Jang, S. Ryu, Y.M. Kim, Appl. Phys. Lett. 84, 1338 (2004)
• 9. A. Bonanni, T. Dietl, Chem. Soc. Rev. 39, 528 (2010)
• 10. T. Dietl, T. Andrearczyk, A. Lipińska, M. Kiecana, Maureen Tay, Yihong Wu, Phys. Rev. B 76, 155312 (2007)
• 11. M.I. Łukasiewicz, B. Witkowski, M. Godlewski, E. Guziewicz, M. Sawicki, W. Paszkowicz, R. Jakieła, T.A. Krajewski, G. Łuka, Phys. Status Solidi B 247, 1666 (2010)
• 12. D.V. Azamat, A. Dejneka, V.A. Trepakov, L. Jastrabik, M. Fanciulli, Y.Y. Ivanov, M. Godlewski, V.I. Sokolov, J. Rosa, A.G. Badalyan, Phys. Status Solidi Rapid Res. Lett. 5, 138 (2011)
• 13. N. Jedrecy, H.J. von Bardeleben, Y. Zheng, J.-L. Cantin, Phys. Rev. B 69, 041308(R) (2004)
• 14. H.J. Von Bardeleben, N. Jedrecy, J.L. Cantin, Appl. Phys. Lett. 93, 142505 (2008)

Identifiers

DOI

10.12693/APhysPolA.120.911