Optical and Structural Characterization of Zinc Oxide Nanostructures Obtained by Atomic Layer Deposition Method

• Authors: Ł. Wachnicki , B. Witkowski , S. Gierałtowska , K. Kopalko , M. Godlewski , E. Guziewicz
• Languages of publication: EN

Abstracts

EN

Zinc oxide is a II-VI semiconductor material which is gaining increasing interest in various fields such as biology, medicine or electronics. This semiconductor reveals very special physical and chemical properties, which imply many applications including a transparent electrode in solar cells or LED diodes. Among many applications, ZnO is also a prospective material for sensor technology, where developed surface morphology is very advantageous. In this work we present ZnO nanowires growth using atomic layer deposition method. ZnO nanowires were obtained using controlled physical properties. As a substrate we used gallium arsenide with gold-gallium eutectic droplets prepared on the surface at high temperature. To obtain the eutectic solution there was put a gold thin film on GaAs through the sputtering and then we annealed the sample in a nitrogen gas flow. The so-prepared substrate was applied for growth of ZnO nanowires. We used deionized water and zinc chloride as oxygen and zinc precursors, respectively. The eutectic mixture serves as a catalyst for the ZnO nanowires growth. Au-Ga droplets flow on the front of ZnO nanowires. Scanning electron microscopy images show ZnO nanorods in a form of crystallites of up to 1 μm length and a 100 nm diameter. It is the first demonstration of the ZnO nanowires growth by atomic layer deposition using the vapour-liquid-solid approach.

Keywords

EN

81.07.Bc; 82.47.Rs; 68.55.-a; 81.15.Aa

Discipline

• 81.15.Aa: Theory and models of film growth
• 81.07.Bc: Nanocrystalline materials
• 82.47.Rs: Electrochemical sensors
• 68.55.-a: Thin film structure and morphology(for methods of thin film deposition, film growth and epitaxy, see 81.15.-z)

• Journal: Acta Physica Polonica A
• Year: 2011
• Volume: 120
• Issue: 5
• Pages: 905-907

Dates

published

2011-11

Contributors

author

Ł. Wachnicki

• Polish Academy of Sciences, Institute of Physics, al. Lotników 32/46, 02-668 Warsaw, Poland

author

B. Witkowski

• Polish Academy of Sciences, Institute of Physics, al. Lotników 32/46, 02-668 Warsaw, Poland

author

S. Gierałtowska

• Polish Academy of Sciences, Institute of Physics, al. Lotników 32/46, 02-668 Warsaw, Poland

author

K. Kopalko

• Polish Academy of Sciences, Institute of Physics, al. Lotników 32/46, 02-668 Warsaw, Poland

author

M. Godlewski

• Polish Academy of Sciences, Institute of Physics, al. Lotników 32/46, 02-668 Warsaw, Poland
• Cardinal Stefan Wyszynski University, College of Science, Department of Mathematics and Natural Sciences, Warsaw, Poland

author

E. Guziewicz

• Polish Academy of Sciences, Institute of Physics, al. Lotników 32/46, 02-668 Warsaw, Poland

References

• 1. T. Suntola, in: Handbook of Crystal Growth, Part 3b: Growth Mechanisms and Dynamics, Ed. D.T.J. Hurle, Elsevier, Amsterdam 1994, p. 605
• 2. Ł. Wachnicki, T. Krajewski, G. Łuka, B. Witkowski, B. Kowalski, K. Kopalko, J.Z. Domagala, M. Guziewicz, M. Godlewski, E. Guziewicz, Thin Solid Films 518, 4556 (2010)
• 3. E. Przezdziecka, T. Krajewski, L. Wachnicki, A. Szczepanik, A. Wójcik-Głodowska, S. Yatsunenko, E. Lusakowska, W. Paszkowicz, E. Guziewicz, M. Godlewski, Acta Phys. Pol. A 114, 1303 (2008)
• 4. S. Gierałtowska, D. Sztenkiel, E. Guziewicz, M. Godlewski, G. Łuka, B.S. Witkowski, Ł. Wachnicki, E. Łusakowska, T. Dietland, M. Sawicki, Acta Phys. Pol. A 119, 692 (2011)
• 5. C. Klingshirn, Phys. Status Solidi B 244, 3027 (2007)
• 6. S.J. Pearton, D.P. Norton, K. Ip, Y.W. Heo, T. Steiner, Superlattices Microstruct. 34, 3 (2003)
• 7. M. Godlewski, E. Guziewicz, G. Łuka, T. Krajewski, M. Łukasiewicz, Ł. Wachnicki, A. Wachnicka, K. Kopalko, A. Sarem, B. Dalami, Thin Solid Films 518, 1145 (2009)

Identifiers

DOI

10.12693/APhysPolA.120.905