Effect of the Built-In Strain on the In-Plane Optical Anisotropy of m-Plane GaN/AlGaN Quantum Wells

• Authors: S. Łepkowski , W. Bardyszewski , H. Teisseyre
• Languages of publication: EN

Abstracts

EN

We study theoretically the influence of the anisotropic biaxial strain originating from the lattice mismatch between the m-plane GaN/AlGaN quantum wells structure and the substrate on the optical anisotropy of such systems. It is demonstrated that the oscillator strengths for optical transitions with polarization of light parallel and perpendicular to the crystal axis c strongly depend on strain to such an extent that, by increasing the concentration of Al in the substrate from x = 0 to x = 0.5 one can change the polarization of the emitted light with respect to the c-axis by 90 degrees.

Keywords

EN

78.40.Fy; 78.20.Bh; 78.30.Fs

Discipline

• 78.20.Bh: Theory, models, and numerical simulation
• 78.40.Fy: Semiconductors
• 78.30.Fs: III-V and II-VI semiconductors

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2011
• Volume: 120
• Issue: 5
• Pages: 897-898

Dates

published

2011-11

Contributors

author

S. Łepkowski

• Institute of High Pressure Physics, "Unipress", Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warszawa, Poland

author

W. Bardyszewski

• Institute of Theoretical Physics, Faculty of Physics, University of Warsaw, Hoża 69, 00-681 Warszawa, Poland

author

H. Teisseyre

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warszawa, Poland

References

• 1. P. Misra, O. Brandt, H.T. Grahn, H. Teisseyre, M. Siekacz, C. Skierbiszewski, B. Łucznik, Appl. Phys. Lett. 91, 141903 (2007)
• 2. S.L. Chuang, C.S. Chang, Phys. Rev. B 54, 2491 (1996)
• 3. Sandip Ghosh, P. Waltereit, O. Brandt, H.T. Grahn, K.H. Ploog, Phys. Rev. B 65, 075202 (2002)
• 4. S.P. Łepkowski, J.A. Majewski, G. Jurczak, Phys. Rev. B 72, 245201 (2005)

Identifiers

DOI

10.12693/APhysPolA.120.897