Symmetry of the Top Valence Band States in GaN/AlGaN Quantum Wells and its Influence on the Polarization of Emitted Light

• Authors: W. Bardyszewski , S. Łepkowski
• Languages of publication: EN

Abstracts

EN

We show theoretically that for narrow GaN/AlGaN quantum wells, lattice matched to GaN substrate/buffer and grown along the (0001) crystallographic direction the topmost valence subband symmetry depends critically on such parameters as quantum well thickness and barrier composition. This effect determines polarization of the emitted light. It is noted that the symmetry of the topmost valence band level is sensitive to the values of the D_3 and D_4 deformation potentials and can be employed in verification of existing literature values of these parameters.

Keywords

EN

78.40.Fy; 78.20.Bh; 78.30.Fs

Discipline

• 78.20.Bh: Theory, models, and numerical simulation
• 78.40.Fy: Semiconductors
• 78.30.Fs: III-V and II-VI semiconductors

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2011
• Volume: 120
• Issue: 5
• Pages: 894-896

Dates

published

2011-11

Contributors

author

W. Bardyszewski

• Institute of Theoretical Physics, Faculty of Physics, University of Warsaw, Hoża 69, 00-681 Warszawa, Poland

author

S. Łepkowski

• Institute of High Pressure Physics, "Unipress", Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warszawa, Poland

References

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Identifiers

DOI

10.12693/APhysPolA.120.894