PL EN


Preferences help
enabled [disable] Abstract
Number of results
2011 | 120 | 5 | 894-896
Article title

Symmetry of the Top Valence Band States in GaN/AlGaN Quantum Wells and its Influence on the Polarization of Emitted Light

Content
Title variants
Languages of publication
EN
Abstracts
EN
We show theoretically that for narrow GaN/AlGaN quantum wells, lattice matched to GaN substrate/buffer and grown along the (0001) crystallographic direction the topmost valence subband symmetry depends critically on such parameters as quantum well thickness and barrier composition. This effect determines polarization of the emitted light. It is noted that the symmetry of the topmost valence band level is sensitive to the values of the D_3 and D_4 deformation potentials and can be employed in verification of existing literature values of these parameters.
Keywords
EN
Year
Volume
120
Issue
5
Pages
894-896
Physical description
Dates
published
2011-11
References
  • 1. H. Morkoc, Nitride Semiconductors and Devices, Springer-Verlag, Berlin 1999
  • 2. P.A. Shields, R.J. Nicholas, N. Grandjean, J. Massies, Phys. Rev. B 63, 245319 (2001)
  • 3. Q. Yan, P. Rinke, M. Scheffler, C.G.V. de Walle, Appl. Phys. Lett. 95, 121111 (2009)
  • 4. S.L. Chuang, C.S. Chang, Phys. Rev. B 54, 2491 (1996)
  • 5. I. Vurgaftman, R. Meyer, J. Appl. Phys. 94, 3675 (2003)
  • 6. S.P. Łepkowski, J.A. Majewski, G. Jurczak, Phys. Rev. B 72, 245201 (2005)
  • 7. P. Rinke, M. Winkelnkemper, A. Qteish, D. Bimberg, J. Neugebauer, M. Scheffler, Phys. Rev. B 77, 075202 (2008)
Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv120n520kz
Identifiers
JavaScript is turned off in your web browser. Turn it on to take full advantage of this site, then refresh the page.