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2011 | 120 | 5 | 894-896
Article title

Symmetry of the Top Valence Band States in GaN/AlGaN Quantum Wells and its Influence on the Polarization of Emitted Light

Content
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Languages of publication
EN
Abstracts
EN
We show theoretically that for narrow GaN/AlGaN quantum wells, lattice matched to GaN substrate/buffer and grown along the (0001) crystallographic direction the topmost valence subband symmetry depends critically on such parameters as quantum well thickness and barrier composition. This effect determines polarization of the emitted light. It is noted that the symmetry of the topmost valence band level is sensitive to the values of the D_3 and D_4 deformation potentials and can be employed in verification of existing literature values of these parameters.
Keywords
EN
Publisher

Year
Volume
120
Issue
5
Pages
894-896
Physical description
Dates
published
2011-11
Contributors
  • Institute of Theoretical Physics, Faculty of Physics, University of Warsaw, Hoża 69, 00-681 Warszawa, Poland
author
  • Institute of High Pressure Physics, "Unipress", Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warszawa, Poland
References
  • 1. H. Morkoc, Nitride Semiconductors and Devices, Springer-Verlag, Berlin 1999
  • 2. P.A. Shields, R.J. Nicholas, N. Grandjean, J. Massies, Phys. Rev. B 63, 245319 (2001)
  • 3. Q. Yan, P. Rinke, M. Scheffler, C.G.V. de Walle, Appl. Phys. Lett. 95, 121111 (2009)
  • 4. S.L. Chuang, C.S. Chang, Phys. Rev. B 54, 2491 (1996)
  • 5. I. Vurgaftman, R. Meyer, J. Appl. Phys. 94, 3675 (2003)
  • 6. S.P. Łepkowski, J.A. Majewski, G. Jurczak, Phys. Rev. B 72, 245201 (2005)
  • 7. P. Rinke, M. Winkelnkemper, A. Qteish, D. Bimberg, J. Neugebauer, M. Scheffler, Phys. Rev. B 77, 075202 (2008)
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv120n520kz
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