Magneto-Optical Studies of Narrow Band-Gap Heterostructures with Type II Quantum Dots InSb in an InAs Matrix

• Authors: M. Mukhin , Ya. Terent'ev , L. Golub , M. Nestoklon , B. Meltser , A. Semenov , V. Solov'ev , A. Sitnikova , A. Toropov , S. Ivanov
• Languages of publication: EN

Abstracts

EN

Magneto-optical properties of type II heterostructures with InSb/InAs quantum dots has been studied at external magnetic field applied in the Faraday geometry. The emission polarization degree can be changed in the range from 100% σ-minus to 10% σ-plus due to excitation intensity and temperature variation. The detailed calculation of the band structure within a tight-binding approximation is presented. The simulation of the experimental data reveals that the oscillator strength of the optical transitions involving electrons with the spin oriented along and opposite to the magnetic field vector differs by approximately 1.8 times in the heterostructures under study.

Keywords

EN

75.75.-c; 71.70.Ej; 78.55.Cr; 78.67.Hc; 78.20.Ls; 75.40.Mg

Discipline

• 78.55.Cr: III-V semiconductors
• 75.40.Mg: Numerical simulation studies
• 75.75.-c: Magnetic properties of nanostructures
• 78.20.Ls: Magneto-optical effects(for magneto-optical devices, see 85.70.Sq)
• 78.67.Hc: Quantum dots
• 71.70.Ej: Spin-orbit coupling, Zeeman and Stark splitting, Jahn-Teller effect

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2011
• Volume: 120
• Issue: 5
• Pages: 868-869

Dates

published

2011-11

Contributors

author

M. Mukhin

• Ioffe Physical-Technical Institute of Russian Academy of Sciences, 26 Polytekhnicheskaya, St Petersburg 194021, Russian Federation
• St Petersburg Academic University - Nanotechnology Research Centre of Russian Academy of Sciences, 8/3 Khlopina, St Petersburg 194021, Russian Federation

author

Ya. Terent'ev

• Ioffe Physical-Technical Institute of Russian Academy of Sciences, 26 Polytekhnicheskaya, St Petersburg 194021, Russian Federation

author

L. Golub

• Ioffe Physical-Technical Institute of Russian Academy of Sciences, 26 Polytekhnicheskaya, St Petersburg 194021, Russian Federation

author

M. Nestoklon

• Ioffe Physical-Technical Institute of Russian Academy of Sciences, 26 Polytekhnicheskaya, St Petersburg 194021, Russian Federation

author

B. Meltser

• Ioffe Physical-Technical Institute of Russian Academy of Sciences, 26 Polytekhnicheskaya, St Petersburg 194021, Russian Federation

author

A. Semenov

• Ioffe Physical-Technical Institute of Russian Academy of Sciences, 26 Polytekhnicheskaya, St Petersburg 194021, Russian Federation

author

V. Solov'ev

• Ioffe Physical-Technical Institute of Russian Academy of Sciences, 26 Polytekhnicheskaya, St Petersburg 194021, Russian Federation

author

A. Sitnikova

• Ioffe Physical-Technical Institute of Russian Academy of Sciences, 26 Polytekhnicheskaya, St Petersburg 194021, Russian Federation

author

A. Toropov

• Ioffe Physical-Technical Institute of Russian Academy of Sciences, 26 Polytekhnicheskaya, St Petersburg 194021, Russian Federation

author

S. Ivanov

• Ioffe Physical-Technical Institute of Russian Academy of Sciences, 26 Polytekhnicheskaya, St Petersburg 194021, Russian Federation

References

• 1. T.T. Chen, C.H. Chen, W.S. Su, M.H. Ya, Y.F. Chen, P.W. Liu, H.H. Lin, J. Appl. Phys. 93, 9655 (2002)
• 2. Ya.V. Terent'ev, A.A. Toropov, B.Y. Meltser, A.N. Semenov, V.A. Solov'ev, I.V. Sedova, A.A. Usikova, S.V. Ivanov, Semiconductors 44, 194 (2010)
• 3. Ya.V. Terent'ev, O.G. Lyublinskaya, A.A. Toropov, B.Ya. Meltser, A.N. Semenov, V.A. Solov'ev, S.V. Ivanov, Semiconductors 43, 635 (2009)
• 4. S.V. Ivanov, V.A. Solov'ev, B.Ya. Meltser, Ya.V. Terent'ev, L.G. Prokopova, S.V. Ivanov, A.N. Semenov, J. Cryst. Growth 278, 203 (2005)

Identifiers

DOI

10.12693/APhysPolA.120.868