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2011 | 120 | 5 | 868-869
Article title

Magneto-Optical Studies of Narrow Band-Gap Heterostructures with Type II Quantum Dots InSb in an InAs Matrix

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EN
Abstracts
EN
Magneto-optical properties of type II heterostructures with InSb/InAs quantum dots has been studied at external magnetic field applied in the Faraday geometry. The emission polarization degree can be changed in the range from 100% σ-minus to 10% σ-plus due to excitation intensity and temperature variation. The detailed calculation of the band structure within a tight-binding approximation is presented. The simulation of the experimental data reveals that the oscillator strength of the optical transitions involving electrons with the spin oriented along and opposite to the magnetic field vector differs by approximately 1.8 times in the heterostructures under study.
Keywords
Contributors
author
  • Ioffe Physical-Technical Institute of Russian Academy of Sciences, 26 Polytekhnicheskaya, St Petersburg 194021, Russian Federation
  • St Petersburg Academic University - Nanotechnology Research Centre of Russian Academy of Sciences, 8/3 Khlopina, St Petersburg 194021, Russian Federation
author
  • Ioffe Physical-Technical Institute of Russian Academy of Sciences, 26 Polytekhnicheskaya, St Petersburg 194021, Russian Federation
author
  • Ioffe Physical-Technical Institute of Russian Academy of Sciences, 26 Polytekhnicheskaya, St Petersburg 194021, Russian Federation
author
  • Ioffe Physical-Technical Institute of Russian Academy of Sciences, 26 Polytekhnicheskaya, St Petersburg 194021, Russian Federation
author
  • Ioffe Physical-Technical Institute of Russian Academy of Sciences, 26 Polytekhnicheskaya, St Petersburg 194021, Russian Federation
author
  • Ioffe Physical-Technical Institute of Russian Academy of Sciences, 26 Polytekhnicheskaya, St Petersburg 194021, Russian Federation
author
  • Ioffe Physical-Technical Institute of Russian Academy of Sciences, 26 Polytekhnicheskaya, St Petersburg 194021, Russian Federation
author
  • Ioffe Physical-Technical Institute of Russian Academy of Sciences, 26 Polytekhnicheskaya, St Petersburg 194021, Russian Federation
author
  • Ioffe Physical-Technical Institute of Russian Academy of Sciences, 26 Polytekhnicheskaya, St Petersburg 194021, Russian Federation
author
  • Ioffe Physical-Technical Institute of Russian Academy of Sciences, 26 Polytekhnicheskaya, St Petersburg 194021, Russian Federation
References
  • 1. T.T. Chen, C.H. Chen, W.S. Su, M.H. Ya, Y.F. Chen, P.W. Liu, H.H. Lin, J. Appl. Phys. 93, 9655 (2002)
  • 2. Ya.V. Terent'ev, A.A. Toropov, B.Y. Meltser, A.N. Semenov, V.A. Solov'ev, I.V. Sedova, A.A. Usikova, S.V. Ivanov, Semiconductors 44, 194 (2010)
  • 3. Ya.V. Terent'ev, O.G. Lyublinskaya, A.A. Toropov, B.Ya. Meltser, A.N. Semenov, V.A. Solov'ev, S.V. Ivanov, Semiconductors 43, 635 (2009)
  • 4. S.V. Ivanov, V.A. Solov'ev, B.Ya. Meltser, Ya.V. Terent'ev, L.G. Prokopova, S.V. Ivanov, A.N. Semenov, J. Cryst. Growth 278, 203 (2005)
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv120n512kz
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