Wide Range Wavelength Tuning of InGaAsP/InP Laser Diodes

• Authors: M. Bajda , W. Trzeciakowski , J. Majewski
• Languages of publication: EN

Abstracts

EN

We present results of theoretical studies of external tuning for laser diodes based on InGaAsP/InP heterostructures at temperatures from 300 K down to 80 K and at hydrostatic pressures up to 2.27 GPa. The tuning range achieved by pressure and grating was 390 nm (from 1220 nm to 1610 nm). At lower temperatures the tuning range achieved with grating was significantly reduced. Our results indicate that pressure tuning is much more effective than temperature tuning when combined with tuning by external grating.

Keywords

EN

42.55.Px; 85.60.Jb

Discipline

• 42.55.Px: Semiconductor lasers; laser diodes
• 85.60.Jb: Light-emitting devices

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2011
• Volume: 120
• Issue: 5
• Pages: 852-855

Dates

published

2011-11

Contributors

author

M. Bajda

• Institute of Theoretical Physics, Faculty of Physics, University of Warsaw, Hoża 69, 00-681 Warszawa, Poland
• Institute of High Pressure Physics Unipress, Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warszawa, Poland

author

W. Trzeciakowski

• Institute of High Pressure Physics Unipress, Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warszawa, Poland

author

J. Majewski

• Institute of Theoretical Physics, Faculty of Physics, University of Warsaw, Hoża 69, 00-681 Warszawa, Poland

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Identifiers

DOI

10.12693/APhysPolA.120.852