Optical Transitions between Confined and Unconfined States in p-Type Asymmetric GaAs/InGaAs/AlGaAs QW Structures

• Authors: P. Sitarek , K. Ryczko , J. Misiewicz , D. Reuter , A. Wieck
• Languages of publication: EN

Abstracts

EN

We present contactless surface photovoltage spectroscopy and photoreflectance studies of 10 nm wide, p-type doped asymmetric GaAs/InGaAs/AlGaAs quantum well structures. The MBE grown structures differ in spacer thickness between the quantum well and the reservoir of holes. The doping causes that quantum well is placed in electric field. The surface photovoltage spectroscopy measurements gave us detailed information about the optical transitions between confined states and between confined and unconfined states. The comparison of experimental and numerical analysis allows us to identify all features present in the surface photovoltage spectroscopy and photoreflectance spectra. It has been found that spacer layer thickness has significant influence on surface photovoltage spectroscopy spectra.

Keywords

EN

73.50.Pz; 78.66.Fd; 78.67.De

Discipline

• 78.67.De: Quantum wells
• 78.66.Fd: III-V semiconductors
• 73.50.Pz: Photoconduction and photovoltaic effects

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2011
• Volume: 120
• Issue: 5
• Pages: 849-851

Dates

published

2011-11

Contributors

author

P. Sitarek

• Institute of Physics, Wrocław University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland

author

K. Ryczko

• Institute of Physics, Wrocław University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland

author

J. Misiewicz

• Institute of Physics, Wrocław University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland

author

D. Reuter

• Angewandte Festkörperphysik, Ruhr-Universität Bochum, Universitätstr. 150, 44780 Bochum, Germany

author

A. Wieck

• Angewandte Festkörperphysik, Ruhr-Universität Bochum, Universitätstr. 150, 44780 Bochum, Germany

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Identifiers

DOI

10.12693/APhysPolA.120.849