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2011 | 120 | 5 | 849-851
Article title

Optical Transitions between Confined and Unconfined States in p-Type Asymmetric GaAs/InGaAs/AlGaAs QW Structures

Content
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Languages of publication
EN
Abstracts
EN
We present contactless surface photovoltage spectroscopy and photoreflectance studies of 10 nm wide, p-type doped asymmetric GaAs/InGaAs/AlGaAs quantum well structures. The MBE grown structures differ in spacer thickness between the quantum well and the reservoir of holes. The doping causes that quantum well is placed in electric field. The surface photovoltage spectroscopy measurements gave us detailed information about the optical transitions between confined states and between confined and unconfined states. The comparison of experimental and numerical analysis allows us to identify all features present in the surface photovoltage spectroscopy and photoreflectance spectra. It has been found that spacer layer thickness has significant influence on surface photovoltage spectroscopy spectra.
Keywords
EN
Publisher

Year
Volume
120
Issue
5
Pages
849-851
Physical description
Dates
published
2011-11
Contributors
author
  • Institute of Physics, Wrocław University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland
author
  • Institute of Physics, Wrocław University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland
author
  • Institute of Physics, Wrocław University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland
author
  • Angewandte Festkörperphysik, Ruhr-Universität Bochum, Universitätstr. 150, 44780 Bochum, Germany
author
  • Angewandte Festkörperphysik, Ruhr-Universität Bochum, Universitätstr. 150, 44780 Bochum, Germany
References
  • 1. J.H. Lee, H.S. Yoon, C.S. Park, H.M. Park, IEEE Electron Dev. Lett. 16, 271 (1995)
  • 2. M. Abe, T. Mimura, IEEE J. Solid-State Circuits 26, 1337 (1991)
  • 3. A. Kastalsky, J.H. Abeles, R.F. Lejeny, Appl. Phys. Lett. 50, 708 (1987)
  • 4. B. Adamowicz, J. Szuber, Surf. Sci. 247, 94 (1991)
  • 5. P. Sitarek, H.P. Hsu, Y.S. Huang, J.M. Lin, H.H. Lin, K.K. Tiong, J. Appl. Phys. 105, 123523 (2009)
  • 6. S. Datta, S. Ghosh, B.M. Arora, Rev. Sci. Instrum. 72, 177 (2001)
  • 7. D.E. Aspnes, in: Handbook on Semiconductors, Ed. T.S. Moss, Vol. 2, North-Holland, New York 1980, p. 109
  • 8. Y.S. Huang, H. Qiang, F.H. Pollak, J. Lee, B. Elman, J. Appl. Phys. 70, 3808 (1991)
  • 9. G. Bastard, Wave Mechanics Applied to Semiconductor Heterostructures, Les Editions de Physique, Paris 1988
  • 10. G. Dumitras, H. Riechert, H. Porteanu, F. Koch, Phys. Rev. B 66, 205324 (2002)
  • 11. G. Dumitras, H. Riechert, J. Appl. Phys. 94, 3955 (2003)
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv120n506kz
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