WO_3-Pd Structure in SAW Sensor for Hydrogen Detection

• Authors: T. Hejczyk , M. Urbańczyk
• Languages of publication: EN

Abstracts

EN

In the paper a new sensor structure for surface acoustic wave gas system is presented. A bilayer structure WO_3-Pd thin films may be useful for hydrogen detection in low concentration in air. A bilayer sensor structure of tungsten oxide WO_3 with a very thin catalytic film of palladium on the top has been studied for gas-sensing application at room temperature (about 25°C) in surface acoustic wave system. The bilayer structure of WO_3 layers with a thickness of about 50 nm, 100 nm and 150 nm was made onto a LiNbO_3 Y-cut Z-propagating substrate by means of the vacuum sublimation method using a special aluminum mask. The vapor source consisted of commercially available WO_3 powder (Fluka 99.9%) and molybdenum heater. The thin palladium (Pd) layer (about 10 nm) was made separately on each WO_3 layer by means of vapor deposition in high vacuum. There have been investigated three structures: 50 nm WO_3 + 10 nm Pd, 100 nm WO_3 + 10 nm Pd and 150 nm WO_3 + 10 nm Pd in three canal surface acoustic wave system with reference oscillator. Numerical results obtained by analysis of the surface acoustic wave gas sensor model have been compared with experimental results.

Keywords

EN

43.25.Fe; 77.65.Dq; 68.35.Iv; 07.07.Df

Discipline

• 77.65.Dq: Acoustoelectric effects and surface acoustic waves (SAW) in piezoelectrics(see also 43.35.Pt Surface waves in solids and liquids—in Acoustics Appendix; for surface acoustic wave transducers, see 43.38.Rh—in Acoustics Appendix; for acousto-optical effects, see 78.20.hb, and 43.35.Sx—in Acoustics Appendix)
• 07.07.Df: Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
• 68.35.Iv: Acoustical properties

• Journal: Acta Physica Polonica A
• Year: 2011
• Volume: 120
• Issue: 4
• Pages: 616-620

Dates

published

2011-10

Contributors

author

T. Hejczyk

• ENTE Sp. z o.o., Gaudiego 7, 44-100 Gliwice, Poland

author

M. Urbańczyk

• Faculty of Electrical Engineering, Silesian University of Technology, B. Krzywoustego 2, 44-100 Gliwice, Poland

References

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Identifiers

DOI

10.12693/APhysPolA.120.616