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Number of results
2011 | 120 | 3 | 563-566

Article title

Impedance Spectroscopy of Nanostructure p-ZnGa_{2}Se_{4}/n-Si Heterojunction Diode

Content

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Languages of publication

EN

Abstracts

EN
The impedance characteristics of the nanostructure p-ZnGa_2Se_4/n-Si heterojunction diode were investigated by impedance spectroscopy method in the temperature range (303-503 K) and the frequency range (42 Hz-5 MHz). The real and imaginary parts of the complex impedance are changed with the frequency. Both are decreased with increasing temperature at the lower frequencies and are merged at the higher frequencies. The dielectrical relaxation mechanism of the diode was analyzed by the Cole-Cole plots. The Cole-Cole plots under various temperatures exhibit one relaxation mechanism. With increasing temperature, the radius of the Cole-Cole plots decreases, which suggests a mechanism of temperature-dependent on relaxation.

Keywords

EN

Contributors

author
  • Department of Physics, Faculty of Education, Ain Shams University, Roxy, Cairo, Egypt
author
  • Department of Physics, Faculty of Education, Ain Shams University, Roxy, Cairo, Egypt
author
  • Department of Physics, Faculty of Education, Ain Shams University, Roxy, Cairo, Egypt
author
  • Department of Physics, Faculty of Education, Ain Shams University, Roxy, Cairo, Egypt
  • Department of Metallurgical and Materials Engineering, Firat University, Elazig, Turkey
  • Department of Physics and Astronomy, College of Science, King Saud University, Riyadh, Kingdom of Saudi Arabia
author
  • Department of Physics and Astronomy, College of Science, King Saud University, Riyadh, Kingdom of Saudi Arabia

References

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Document Type

Publication order reference

Identifiers

YADDA identifier

bwmeta1.element.bwnjournal-article-appv120n336kz
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