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2011 | 120 | 3 | 563-566
Article title

Impedance Spectroscopy of Nanostructure p-ZnGa_{2}Se_{4}/n-Si Heterojunction Diode

Content
Title variants
Languages of publication
EN
Abstracts
EN
The impedance characteristics of the nanostructure p-ZnGa_2Se_4/n-Si heterojunction diode were investigated by impedance spectroscopy method in the temperature range (303-503 K) and the frequency range (42 Hz-5 MHz). The real and imaginary parts of the complex impedance are changed with the frequency. Both are decreased with increasing temperature at the lower frequencies and are merged at the higher frequencies. The dielectrical relaxation mechanism of the diode was analyzed by the Cole-Cole plots. The Cole-Cole plots under various temperatures exhibit one relaxation mechanism. With increasing temperature, the radius of the Cole-Cole plots decreases, which suggests a mechanism of temperature-dependent on relaxation.
Keywords
EN
Publisher

Year
Volume
120
Issue
3
Pages
563-566
Physical description
Dates
published
2011-09
received
2011-02-25
(unknown)
2011-03-24
Contributors
author
  • Department of Physics, Faculty of Education, Ain Shams University, Roxy, Cairo, Egypt
author
  • Department of Physics, Faculty of Education, Ain Shams University, Roxy, Cairo, Egypt
author
  • Department of Physics, Faculty of Education, Ain Shams University, Roxy, Cairo, Egypt
author
  • Department of Physics, Faculty of Education, Ain Shams University, Roxy, Cairo, Egypt
  • Department of Metallurgical and Materials Engineering, Firat University, Elazig, Turkey
  • Department of Physics and Astronomy, College of Science, King Saud University, Riyadh, Kingdom of Saudi Arabia
author
  • Department of Physics and Astronomy, College of Science, King Saud University, Riyadh, Kingdom of Saudi Arabia
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Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv120n336kz
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