Electrical and Interfacial Properties of p-Si/P3HT Organic-on-Inorganic Junction Barrier

• Authors: F. Yakuphanoglu , M. Shah , W. Aslam Farooq
• Languages of publication: EN

Abstracts

EN

The electrical characterization of the Al/p-Si/P3HT/Ag organic-on-inorganic diode was done by current-voltage, capacitance-voltage and conductance-voltage methods. The values of ideality factor and barrier height of the diode were determined from the current-voltage characteristics and found as 2.32 and 0.77 eV, respectively. These values were also determined from Cheung's functions and Norde's method due to the non-ideal behavior of the diode. The electronic parameters obtained from the various methods indicate a good consistency with each other. The density of interface states for Al/p-Si/P3HT/Ag organic-on-inorganic diode was found to be 7.64 × 10^{10} cm^{-2} eV^{-1}. The obtained electrical parameters of the Al/p-Si/P3HT/Ag organic-on-inorganic diode are higher than that of the conventional Ag/p-Si Schottky diodes. This indicates that the electrical properties of the silicon Schottky diodes can be controlled using organic interfacial layer.

Keywords

EN

81.07.Pr; 78.40.Me

Discipline

• 81.07.Pr: Organic-inorganic hybrid nanostructures
• 78.40.Me: Organic compounds and polymers

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2011
• Volume: 120
• Issue: 3
• Pages: 558-562

Dates

published

2011-09

received

2011-02-22

(unknown)

2011-03-15

Contributors

author

F. Yakuphanoglu

• Physics Department, Faculty of Science, Firat University, Elazig, Turkey

author

M. Shah

• GIK Institute of Engineering Science and Technology, Topi, Swabi, Khyber Pakhtunkhwa, 23640, Pakistan

author

W. Aslam Farooq

• Department of Physics and Astronomy, College of Science, King Saud University, Riyadh, Kingdom of Saudi Arabia

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Identifiers

DOI

10.12693/APhysPolA.120.558