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2011 | 120 | 3 | 558-562
Article title

Electrical and Interfacial Properties of p-Si/P3HT Organic-on-Inorganic Junction Barrier

Content
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EN
Abstracts
EN
The electrical characterization of the Al/p-Si/P3HT/Ag organic-on-inorganic diode was done by current-voltage, capacitance-voltage and conductance-voltage methods. The values of ideality factor and barrier height of the diode were determined from the current-voltage characteristics and found as 2.32 and 0.77 eV, respectively. These values were also determined from Cheung's functions and Norde's method due to the non-ideal behavior of the diode. The electronic parameters obtained from the various methods indicate a good consistency with each other. The density of interface states for Al/p-Si/P3HT/Ag organic-on-inorganic diode was found to be 7.64 × 10^{10} cm^{-2} eV^{-1}. The obtained electrical parameters of the Al/p-Si/P3HT/Ag organic-on-inorganic diode are higher than that of the conventional Ag/p-Si Schottky diodes. This indicates that the electrical properties of the silicon Schottky diodes can be controlled using organic interfacial layer.
Keywords
EN
Publisher

Year
Volume
120
Issue
3
Pages
558-562
Physical description
Dates
published
2011-09
received
2011-02-22
(unknown)
2011-03-15
Contributors
  • Physics Department, Faculty of Science, Firat University, Elazig, Turkey
author
  • GIK Institute of Engineering Science and Technology, Topi, Swabi, Khyber Pakhtunkhwa, 23640, Pakistan
  • Department of Physics and Astronomy, College of Science, King Saud University, Riyadh, Kingdom of Saudi Arabia
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Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv120n335kz
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