Full-text resources of PSJD and other databases are now available in the new Library of Science.
Visit https://bibliotekanauki.pl

PL EN


Preferences help
enabled [disable] Abstract
Number of results
2011 | 120 | 3 | 480-484

Article title

SPM Characterization of Titanium Disilicide Nanostructures Grown on a Ni-Modified Si(100) Substrate

Content

Title variants

Languages of publication

EN

Abstracts

EN
The paper presents our recent investigations of the early stage growth of titanium silicides on a modified Si(100) substrate. The substrate was modified by deposition of a minute amount of Ni atoms, and the subsequent flash annealing. This process led to the creation of parallel defect lines on the Si(100) surface. We expected TiSi_2 to form elongated structures on top and/or between the defect lines. Though this idea failed, stable nanostructures were observed and characterized using scanning probe microscopy (scanning tunneling microscopy and atomic force microscopy) methods.

Keywords

EN

Year

Volume

120

Issue

3

Pages

480-484

Physical description

Dates

published
2011-09
received
2010-12-13
(unknown)
2011-03-15

Contributors

  • Institute of Physics, Poznań University of Technology, Nieszawska 13A, 60-965 Poznań, Poland
author
  • Institute of Physics, Poznań University of Technology, Nieszawska 13A, 60-965 Poznań, Poland
author
  • Institute of Physics, Poznań University of Technology, Nieszawska 13A, 60-965 Poznań, Poland

References

  • 1. A. Wawro, S. Suto, R. Czajka, A. Kasuya, Nanotechnology 19, 205706 (2008)
  • 2. A. Wawro, S. Suto, A. Kasuya, Phys. Rev. B 72, 205302 (2005)
  • 3. P. Avouris, I.-W. Lyo, Science 264, 942 (1994)
  • 4. M.W. Radny, P.V. Smith, L. Jurczyszyn, Phys. Rev. B 81, 085424 (2010)
  • 5. R. Wiesendanger, Scanning Probe Microscopy and Spectrometry: Methods and Applications, Cambridge University Press, Cambridge 1994
  • 6. R.J. Hamers, R.M. Tromp, J.E. Demuth, Phys. Rev. B 34, 5343 (1985)
  • 7. R.J. Hamers, Ph. Avouris, F. Bozso, Phys. Rev. Lett. 59, 2071 (1987)
  • 8. J.-Y. Koo, J.-Y. Yi, Ch. Hwang, D.-H. Kim, S. Lee, Phys. Rev. B 52, 17269 (1995)
  • 9. R.M. Tromp, R.J. Hamers, J.E. Demuth, Phys. Rev. Lett. 55, 1303 (1985)
  • 10. I. Ono, M. Yoshimura, K. Ueda, J. Vac. Sci. Technol. B 16, 2947 (1998)
  • 11. M.Z. Hossain, Y. Yamashita, K. Mukai, J. Yoshinobu, Phys. Rev. B 67, 153307 (2003)
  • 12. S. Okano, A. Oshiyama, Surf. Sci. 554, 272 (2004)
  • 13. P. Sobotik, I. Ostadal, Surf. Sci. 602, 2835 (2008)
  • 14. T. Uda, K. Terakura, Phys. Rev. B 53, 6999 (1996)
  • 15. K. Kato, T. Ide, S. Miura, A. Tamura, T. Ichinokawa, Surf. Sci. 194, L87 (1988)
  • 16. M. Cegiel, M. Bazarnik, P. Biskupski, S. Winiarz, J. Gutek, A. Bos, S. Suto, S. Mielcarek, A. Wawro, R. Czajka, Appl. Surf. Sci. 254, 6948 (2008)
  • 17. Silicide Technology for Integrated Circuits, Eds. Z. Ma, L.H. Allen, L.J. Chen, The Institution of Electrical Engineers, London 2004
  • 18. H. Jeon, G. Yoon, R.J. Nemanich, Thin Solid Films 299, 178 (1997)
  • 19. T.H. Yang, L.J. Chen, J. Appl. Phys. 98, 034302 (2005)
  • 20. I. Goldfarb, S. Grossman, G. Cohen-Taguri, M. Levinshtein, Appl. Surf. Sci. 238, 29 (2004)
  • 21. M. Toramaru, T. Iida, K. Sato, S. Ohno, K. Shudo, Y. Morikawa, M. Tanaka, J. Phys., Condens. Matter 20, 485006 (2008)
  • 22. L.F Mattheiss, J.C. Hensel, Phys. Rev. B 39, 7754 (1989)
  • 23. I. Horcas, R. Fernández, J.M. Gómez-Rodríguez, J. Colchero, J. Gómez-Herrero, A.M. Baro, Rev. Sci. Instrum. 78, 013705 (2007)
  • 24. G.D. Wilk, Y. Wei, H. Edwards, R.M. Wallance, Appl. Phys. Lett. 70, 2388 (1997)
  • 25. P. Kocan, L. Jurczyszyn, P. Sobotik, I. Ošt'ádal, Phys. Rev. B 77, 113301 (2008)
  • 26. R. Butz, S. Kampers, Appl. Phys. Lett. 61 (1992)
  • 27. Z. He, M. Stevens, D.J. Smith, P.A. Bennett, Surf. Sci. 524, 148 (2003)
  • 28. M. Zinke-Allmang, L.C. Feldman, M.H. Grabow, Surf. Sci. Rep. 16, 377 (1992)

Document Type

Publication order reference

Identifiers

YADDA identifier

bwmeta1.element.bwnjournal-article-appv120n320kz
JavaScript is turned off in your web browser. Turn it on to take full advantage of this site, then refresh the page.