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2011 | 120 | 3 | 480-484
Article title

SPM Characterization of Titanium Disilicide Nanostructures Grown on a Ni-Modified Si(100) Substrate

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EN
Abstracts
EN
The paper presents our recent investigations of the early stage growth of titanium silicides on a modified Si(100) substrate. The substrate was modified by deposition of a minute amount of Ni atoms, and the subsequent flash annealing. This process led to the creation of parallel defect lines on the Si(100) surface. We expected TiSi_2 to form elongated structures on top and/or between the defect lines. Though this idea failed, stable nanostructures were observed and characterized using scanning probe microscopy (scanning tunneling microscopy and atomic force microscopy) methods.
Keywords
EN
Publisher

Year
Volume
120
Issue
3
Pages
480-484
Physical description
Dates
published
2011-09
received
2010-12-13
(unknown)
2011-03-15
Contributors
  • Institute of Physics, Poznań University of Technology, Nieszawska 13A, 60-965 Poznań, Poland
author
  • Institute of Physics, Poznań University of Technology, Nieszawska 13A, 60-965 Poznań, Poland
author
  • Institute of Physics, Poznań University of Technology, Nieszawska 13A, 60-965 Poznań, Poland
References
  • 1. A. Wawro, S. Suto, R. Czajka, A. Kasuya, Nanotechnology 19, 205706 (2008)
  • 2. A. Wawro, S. Suto, A. Kasuya, Phys. Rev. B 72, 205302 (2005)
  • 3. P. Avouris, I.-W. Lyo, Science 264, 942 (1994)
  • 4. M.W. Radny, P.V. Smith, L. Jurczyszyn, Phys. Rev. B 81, 085424 (2010)
  • 5. R. Wiesendanger, Scanning Probe Microscopy and Spectrometry: Methods and Applications, Cambridge University Press, Cambridge 1994
  • 6. R.J. Hamers, R.M. Tromp, J.E. Demuth, Phys. Rev. B 34, 5343 (1985)
  • 7. R.J. Hamers, Ph. Avouris, F. Bozso, Phys. Rev. Lett. 59, 2071 (1987)
  • 8. J.-Y. Koo, J.-Y. Yi, Ch. Hwang, D.-H. Kim, S. Lee, Phys. Rev. B 52, 17269 (1995)
  • 9. R.M. Tromp, R.J. Hamers, J.E. Demuth, Phys. Rev. Lett. 55, 1303 (1985)
  • 10. I. Ono, M. Yoshimura, K. Ueda, J. Vac. Sci. Technol. B 16, 2947 (1998)
  • 11. M.Z. Hossain, Y. Yamashita, K. Mukai, J. Yoshinobu, Phys. Rev. B 67, 153307 (2003)
  • 12. S. Okano, A. Oshiyama, Surf. Sci. 554, 272 (2004)
  • 13. P. Sobotik, I. Ostadal, Surf. Sci. 602, 2835 (2008)
  • 14. T. Uda, K. Terakura, Phys. Rev. B 53, 6999 (1996)
  • 15. K. Kato, T. Ide, S. Miura, A. Tamura, T. Ichinokawa, Surf. Sci. 194, L87 (1988)
  • 16. M. Cegiel, M. Bazarnik, P. Biskupski, S. Winiarz, J. Gutek, A. Bos, S. Suto, S. Mielcarek, A. Wawro, R. Czajka, Appl. Surf. Sci. 254, 6948 (2008)
  • 17. Silicide Technology for Integrated Circuits, Eds. Z. Ma, L.H. Allen, L.J. Chen, The Institution of Electrical Engineers, London 2004
  • 18. H. Jeon, G. Yoon, R.J. Nemanich, Thin Solid Films 299, 178 (1997)
  • 19. T.H. Yang, L.J. Chen, J. Appl. Phys. 98, 034302 (2005)
  • 20. I. Goldfarb, S. Grossman, G. Cohen-Taguri, M. Levinshtein, Appl. Surf. Sci. 238, 29 (2004)
  • 21. M. Toramaru, T. Iida, K. Sato, S. Ohno, K. Shudo, Y. Morikawa, M. Tanaka, J. Phys., Condens. Matter 20, 485006 (2008)
  • 22. L.F Mattheiss, J.C. Hensel, Phys. Rev. B 39, 7754 (1989)
  • 23. I. Horcas, R. Fernández, J.M. Gómez-Rodríguez, J. Colchero, J. Gómez-Herrero, A.M. Baro, Rev. Sci. Instrum. 78, 013705 (2007)
  • 24. G.D. Wilk, Y. Wei, H. Edwards, R.M. Wallance, Appl. Phys. Lett. 70, 2388 (1997)
  • 25. P. Kocan, L. Jurczyszyn, P. Sobotik, I. Ošt'ádal, Phys. Rev. B 77, 113301 (2008)
  • 26. R. Butz, S. Kampers, Appl. Phys. Lett. 61 (1992)
  • 27. Z. He, M. Stevens, D.J. Smith, P.A. Bennett, Surf. Sci. 524, 148 (2003)
  • 28. M. Zinke-Allmang, L.C. Feldman, M.H. Grabow, Surf. Sci. Rep. 16, 377 (1992)
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv120n320kz
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