Characterization of New Structure for Silicon Carbide X-Ray Detector by Method Monte Carlo

• Authors: S. Stankovic , R. Ilic , K. Jankovic , A. Vasic-Milovanovic , B. Loncar
• Languages of publication: EN

Abstracts

EN

This work presents a characterization of radiation absorption properties of silicon carbide (SiC) as semiconductor for the realization of detectors for X-rays. SiC detectors can potentially reach superior performance with respect to all the other semiconductors presently employed in hazardous environments in nuclear and space science and technology. Physics and numerical modeling of photons transport through SiC detector is incorporated in non-destructive Monte Carlo method for determining the energy deposited and dose distribution. The Monte Carlo code has been adopted for numerical simulations for different detector conditions and configurations. The X-ray characterization of new SiC structures originates the improving of design of these detector systems.

Keywords

EN

07.85.Fv; 87.55.kh; 85.30.Kk; 61.72.uf; 77.84.Bw

Discipline

• 85.30.Kk: Junction diodes
• 77.84.Bw: Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
• 87.55.kh: Applications
• 61.72.uf: Ge and Si
• 07.85.Fv: X- and γ-ray sources, mirrors, gratings, and detectors

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2011
• Volume: 120
• Issue: 2
• Pages: 252-255

Dates

published

2011-08

Contributors

author

S. Stankovic

• Vinča Institute of Nuclear Sciences, Belgrade, Serbia

author

R. Ilic

• Vinča Institute of Nuclear Sciences, Belgrade, Serbia

author

K. Jankovic

• Institute for testing materials-IMS, Belgrade, Serbia

author

A. Vasic-Milovanovic

• Faculty of Mechanical Engineering, University of Belgrade, Belgrade, Serbia

author

B. Loncar

• Faculty of Technology and Metallurgy, University of Belgrade, Belgrade, Serbia

References

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Identifiers

DOI

10.12693/APhysPolA.120.252