Aluminium Morphological Modification by Nitrogen-Argon Mixture PIII

• Authors: A. Muñoz-Castro , R. López-Callejas , R. Valencia Alvarado , R. Peña-Eguiluz , A. Mercado-Cabrera , S. Barocio , B. Rodríguez-Méndez , A. de la Piedad-Beneitez
• Languages of publication: EN

Abstracts

EN

With incident fluences of ≈ 10^{12} atoms/cm^2 aluminium samples have been plasma immersion ion implanted with either pure nitrogen or argon/nitrogen mixtures at temperatures around 450°C. X-ray diffraction studies have validated the formation of the cubic phase of AlN, in samples treated with both the gas mixtures and pure nitrogen. Likewise, the presence of the hexagonal phase of AlN has been detected when either pure nitrogen or a 70%N/30%Ar mixture have been used. The signature peak of AlN has also been confirmed by the Raman spectroscopy. The maximal microhardness values were found in samples treated with the mixture. The maximal roughness was achieved with the equal part mixture in all cases, although increasing with the implantation pulse width up to a 300 nm peak at 150 μs. The latter critical value remains invariant under the pure nitrogen plasma treatment, provided that implantation periods in the order of 4.5 h are carried out.

Keywords

EN

52.40.Hf; 52.77.Dq; 81.65.-b; 61.05.cp; 62.20.Qp; 68.37.Hk

Discipline

• 81.65.-b: Surface treatments(for surface preparation and lithography in microelectronics, see 85.40.-e)
• 62.20.Qp: Friction, tribology, and hardness(see also 46.55.+d Tribology and mechanical contacts in continuum mechanics of solids; for materials treatment effects on friction related properties, see 81.40.Pq)
• 52.40.Hf: Plasma-material interactions; boundary layer effects
• 61.05.cp: X-ray diffraction
• 68.37.Hk: Scanning electron microscopy (SEM) (including EBIC)
• 52.77.Dq: Plasma-based ion implantation and deposition(see also 81.15.Jj Ion and electron beam-assisted deposition)

• Journal: Acta Physica Polonica A
• Year: 2011
• Volume: 120
• Issue: 1
• Pages: 167-170

Dates

published

2011-07

Contributors

author

A. Muñoz-Castro

• Instituto Nacional de Investigaciones Nucleares, AP 18-1027, 11801, Mexico DF

author

R. López-Callejas

• Instituto Nacional de Investigaciones Nucleares, AP 18-1027, 11801, Mexico DF
• Instituto Tecnológico de Toluca, AP 890, Toluca, Estado de México, Mexico

author

R. Valencia Alvarado

• Instituto Nacional de Investigaciones Nucleares, AP 18-1027, 11801, Mexico DF

author

R. Peña-Eguiluz

• Instituto Nacional de Investigaciones Nucleares, AP 18-1027, 11801, Mexico DF

author

A. Mercado-Cabrera

• Instituto Nacional de Investigaciones Nucleares, AP 18-1027, 11801, Mexico DF

author

S. Barocio

• Instituto Nacional de Investigaciones Nucleares, AP 18-1027, 11801, Mexico DF

author

B. Rodríguez-Méndez

• Instituto Nacional de Investigaciones Nucleares, AP 18-1027, 11801, Mexico DF

author

A. de la Piedad-Beneitez

• Instituto Tecnológico de Toluca, AP 890, Toluca, Estado de México, Mexico

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Identifiers

DOI

10.12693/APhysPolA.120.167