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Number of results
2011 | 120 | 1 | 133-135

Article title

Magnetoresistance in n-Si/SiO_2/Ni Nanostructures Manufactured by Swift Heavy Ion-Induced Modification Technology

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EN

Abstracts

EN
A study of magnetotransport in the n-Si/SiO_2/Ni nanostructures with granular Ni nanorods in SiO_2 pores was performed over the temperature range 2-300 K and at the magnetic fields induction up to 8 T. The n-Si/SiO_2/Ni Schottky nanostructures display the enhanced magnetoresistive effect at 25 K due to the impurity avalanche mechanism.

Keywords

Contributors

author
  • National Center of Particles and High Energy Physics of BSU, 153 Bogdanovich, 220040 Minsk, Belarus
author
  • Belarussian State University, 4 Independence, 220030 Minsk, Belarus
author
  • Belarussian State University, 4 Independence, 220030 Minsk, Belarus
author
  • Belarussian State University, 4 Independence, 220030 Minsk, Belarus
author
  • Belarussian State University, 4 Independence, 220030 Minsk, Belarus
author
  • Belarussian State University, 4 Independence, 220030 Minsk, Belarus
author
  • Belarussian State University, 4 Independence, 220030 Minsk, Belarus
author
  • Al-Balqa Applied University, P.O. Box 2041, Amman 11953, Salt, Jordan
  • Joint Institute for Nuclear Research, 6 Joliot-Curie, 141980 Dubna, Russia
  • Lublin University of Technology, Nadbystrzycka 38a, 20-618 Lublin, Poland
author
  • Scientific-Practical Material Research Centre NAS of Belarus, 19 P. Brovka, 220072, Minsk, Belarus
author
  • Scientific-Practical Material Research Centre NAS of Belarus, 19 P. Brovka, 220072, Minsk, Belarus

References

  • 1. Y. Imry, in: Nanostructures and Mesoscopic Systems, Eds. W.P. Kirk, M.A. Reed, Academic, New York 1992, p. 11
  • 2. H. Shang, G. Cao, in: Springer Handbook of Nanotechnology, Ed. B. Brushan, Springer, Berlin 2007, p. 161
  • 3. D. Fink, A.V. Petrov, K. Hoppe, W.R. Fahrner, R.M. Papaleo, A.S. Berdinsky, A. Chandra, A. Chemseddine, A. Zrineh, A. Biswas, F. Faupel, L.T. Chadderton, Nucl. Instrum. Methods Phys. Res. B 218, 355 (2004)
  • 4. D. Fink, D. Sinha, J. Opitz-Coutureau, A.V. Petrov, S.E. Demyanov, W.R. Fahrner, K. Hoppe, A.K. Fedotov, L.T. Chadderton, A.S. Berdinsky, in: Physics, Chemistry and Application of Nanostructures (Reviews and Short Notes to Nanomeeting - 2005, Minsk, Belarus 2005), Eds. V.E. Borisenko, S.V. Gaponenko, V.S. Gurin, World Scientific, Singapore 2005, p. 474
  • 5. E.A. Streltsov, N.P. Osipovich, L.S. Ivashkevich, A.S. Lyakhov, Electrochim. Acta 44, 2645 (1999)
  • 6. Yu.A. Ivanova, D.K. Ivanou, A.K. Fedotov, E.A. Streltsov, S.E. Demyanov, A.V. Petrov, E.Yu. Kaniukov, D. Fink, J. Mater. Sci. 42, 9163 (2007)
  • 7. B.M. Askerov, Electron Transport Phenomena in Semiconductors, World Sci., Singapore 1994
  • 8. A. Fedotov, D. Ivanou, Y. Ivanova, A. Mazanik, I. Svito, A. Saad, S. Tyutyunnikov, S. Demyanov, V. Fedotova, in: Abstracts of Forth Seeheim Conference on Magnetism SCM 2010, Karlsruhe Institute of Technology, 2010, p. 52
  • 9. A. Loukashevich, V.A. Grishanov, Devices Control Syst. 4, 40 (1992)

Document Type

Publication order reference

Identifiers

YADDA identifier

bwmeta1.element.bwnjournal-article-appv120n134kz
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