Formation of Submicron n^{+}-Layers in Silicon Implanted with H^{+}-Ions

• Authors: Y. Pokotilo , A. Petukh , A. Giro , P. Węgierek
• Languages of publication: EN

Abstracts

EN

Formation of submicron n^{+}-layers in commercial Pd-Si Schottky diodes with the active base region fabricated on epitaxial phosphorus-doped silicon, implanted with 300 keV hydrogen ions and thermally treated in the temperature range 20-450°C, is studied. Standard C-V measurements and deep level transient spectroscopy were used. It is shown that formation of n^{+}-layers at the end of projective range of ions was caused by producing of hydrogen-related donors of two types, one of them is bistable. The kinetics of their accumulation is described by the first-order reaction with the following values of parameters for bistable and not transforming H-donors: the activation energy Δ E_1 = 2.3 eV, the pre-exponential factor τ_{01} = 9.1 × 10^{-17} s, the ultimate concentration N_{01} = (1 ± 0.1) × 10^{16} cm^{-3}; Δ E_2 = 1.4 eV, τ_{02} = 4.2 × 10^{-9} s, N_{02} = (3 ± 0.1) × 10^{16} cm^{-3}. Correlation between processes of transformation of post-implantation radiation defects and hydrogen-related donors formation was identified.

Keywords

EN

61.80.Jh; 81.05.Cy; 81.40.Wx

Discipline

• 81.40.Wx: Radiation treatment (particle and electromagnetic)(see also 61.80.-x Physical radiation effects, radiation damage)
• 81.05.Cy: Elemental semiconductors(for semiconductors in electrochemistry, see 82.45.Vp)
• 61.80.Jh: Ion radiation effects(for ion implantation, see 61.72.U-)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2011
• Volume: 120
• Issue: 1
• Pages: 129-132

Dates

published

2011-07

Contributors

author

Y. Pokotilo

• Belarussian State University, 4 Pr. Nezavisimosti, Minsk, Belarus

author

A. Petukh

• Belarussian State University, 4 Pr. Nezavisimosti, Minsk, Belarus

author

A. Giro

• Belarussian State University, 4 Pr. Nezavisimosti, Minsk, Belarus

author

P. Węgierek

• Lublin University of Technology, Nadbystrzycka 38d, 20-618 Lublin, Poland

References

• 1. V.V. Kozlovskii, Proton Beam Modification of Semiconductors, Nauka, St. Petersburg 2003
• 2. Y. Ohmura, Y. Zohta, M. Kanazawa, Phys. Status Solidi A 15, 93 (1973)
• 3. Yu.V. Gorelkinskii, V.O. Sigle, Zh.S. Takibaev, Phys. Status Solidi A 22, K55 (1974)
• 4. B.N. Mukashev, M.F. Tamendarov, S.Zh. Tokmoldin, V.V. Frolov, Phys. Status Solidi A 91, 509 (1985)
• 5. E. Simoen, Y.L. Huang, Y. Ma, J. Lauwaert, P. Clauws, J.M. Rafi, A. Ulyashin, C. Claeys, J. Electrochem. Soc. 156, H434 (2009)
• 6. Yu.M. Pokotilo, A.N. Petukh, V.V. Litvinov, V.G. Tsvyrko, Inorg. Mater. 45, 1205 (2009)
• 7. Yu.M. Pokotilo, A.N. Petukh, V.V. Litvinov, V.G. Tsvyrko, Semiconductors 39, 768 (2005)

Identifiers

DOI

10.12693/APhysPolA.120.129