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Number of results
2011 | 120 | 1 | 129-132
Article title

Formation of Submicron n^{+}-Layers in Silicon Implanted with H^{+}-Ions

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EN
Abstracts
EN
Formation of submicron n^{+}-layers in commercial Pd-Si Schottky diodes with the active base region fabricated on epitaxial phosphorus-doped silicon, implanted with 300 keV hydrogen ions and thermally treated in the temperature range 20-450°C, is studied. Standard C-V measurements and deep level transient spectroscopy were used. It is shown that formation of n^{+}-layers at the end of projective range of ions was caused by producing of hydrogen-related donors of two types, one of them is bistable. The kinetics of their accumulation is described by the first-order reaction with the following values of parameters for bistable and not transforming H-donors: the activation energy Δ E_1 = 2.3 eV, the pre-exponential factor τ_{01} = 9.1 × 10^{-17} s, the ultimate concentration N_{01} = (1 ± 0.1) × 10^{16} cm^{-3}; Δ E_2 = 1.4 eV, τ_{02} = 4.2 × 10^{-9} s, N_{02} = (3 ± 0.1) × 10^{16} cm^{-3}. Correlation between processes of transformation of post-implantation radiation defects and hydrogen-related donors formation was identified.
Keywords
EN
Contributors
author
  • Belarussian State University, 4 Pr. Nezavisimosti, Minsk, Belarus
author
  • Belarussian State University, 4 Pr. Nezavisimosti, Minsk, Belarus
author
  • Belarussian State University, 4 Pr. Nezavisimosti, Minsk, Belarus
author
  • Lublin University of Technology, Nadbystrzycka 38d, 20-618 Lublin, Poland
References
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  • 4. B.N. Mukashev, M.F. Tamendarov, S.Zh. Tokmoldin, V.V. Frolov, Phys. Status Solidi A 91, 509 (1985)
  • 5. E. Simoen, Y.L. Huang, Y. Ma, J. Lauwaert, P. Clauws, J.M. Rafi, A. Ulyashin, C. Claeys, J. Electrochem. Soc. 156, H434 (2009)
  • 6. Yu.M. Pokotilo, A.N. Petukh, V.V. Litvinov, V.G. Tsvyrko, Inorg. Mater. 45, 1205 (2009)
  • 7. Yu.M. Pokotilo, A.N. Petukh, V.V. Litvinov, V.G. Tsvyrko, Semiconductors 39, 768 (2005)
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv120n133kz
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