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2011 | 120 | 1 | 122-124
Article title

Jump Mechanism of Electric Conduction in n-Type Silicon Implanted with Ne^{++} Neon Ions

Content
Title variants
Languages of publication
EN
Abstracts
EN
The article presents the results of research on alternating-current electrical conduction in phosphorus-doped silicon, strongly defected by the implantation of Ne^{++} neon ions. An analysis of electrical properties recorded at the annealing temperature of T_{a} = 373 K and affected by the changes of testing temperature ranging from 253 K to 368 K as well as frequency from 50 Hz to 5 MHz has been discussed. The obtained results have confirmed the occurrence of two conduction mechanisms in strongly defected semiconductors: the band conduction mechanism that is characteristic of low frequency values and the jump conduction one that corresponds to higher frequencies.
Keywords
EN
Year
Volume
120
Issue
1
Pages
122-124
Physical description
Dates
published
2011-07
References
  • 1. P. Żukowski, J. Partyka, P. Węgierek, Phys. Status Solidi A 159, 509 (1997)
  • 2. J. Partyka, P. Żukowski, P. Węgierek, A. Rodzik, Y. Sidorenko, Y. Szostak, Semiconductors 36, 1326 (2002)
  • 3. R.C. Newman, D.N.J. Totterdell, J. Phys. C., Solid State Phys. 8, 3944 (1975)
  • 4. N.F. Mott, E.A. Davis, Electronic Process in Non-Crystalline Materials, Clarendon Press, Oxford 1979
  • 5. P. Żukowski, T. Kołtunowicz, J. Partyka, P. Węgierek, M. Kolasik, A.V. Larkin, J.A. Fedotova, A.K. Fedotov, F.F. Komarov, L. Vlasukova, Przegląd Elektrotechniczny 3, 247 (2008) (in Polish)
Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv120n131kz
Identifiers
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