Effects of Fluences of Irradiation with 107 MeV Krypton Ions on the Recovery Charge of Silicon p^{+}n-Diodes

• Authors: N. Poklonski , N. Gorbachuk , M. Tarasik , S. Shpakovski , V. Filipenia , V. Skuratov , A. Wieck , T. Kołtunowicz
• Languages of publication: EN

Abstracts

EN

The diodes manufactured on the wafers of single-crystalline silicon uniformly doped with phosphorus are studied. The wafer resistivity was 90 Ω cm. Krypton ions are implanted to the side of the p^{+}-region of diodes (energy 107 MeV, fluence Φp from 5 × 10^7 to 4 × 10^9 cm^{-2}). It is shown that recovery charge Q_{rr} is inversely proportional to the square root of the irradiation fluence value Φp. When the fluence increases, the part of the recovery charge Q_{rrA}, due to the high reverse conductance phase, decreases faster than the value Q_{rr}.

Keywords

EN

72.20.Jv; 61.80.Fe

Discipline

• 61.80.Fe: Electron and positron radiation effects
• 72.20.Jv: Charge carriers: generation, recombination, lifetime, and trapping

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2011
• Volume: 120
• Issue: 1
• Pages: 111-114

Dates

published

2011-07

Contributors

author

N. Poklonski

• Belarussian State University, 4 Nezavisimosti, BY-220030, Minsk, Belarus

author

N. Gorbachuk

• Belarussian State University, 4 Nezavisimosti, BY-220030, Minsk, Belarus

author

M. Tarasik

• Belarussian State University, 4 Nezavisimosti, BY-220030, Minsk, Belarus

author

S. Shpakovski

• JSK Integral, 12 Korzhenevskogo, BY-220108 Minsk, Belarus

author

V. Filipenia

• JSK Integral, 12 Korzhenevskogo, BY-220108 Minsk, Belarus

author

V. Skuratov

• Joint Institute for Nuclear Research, 6 Joliot-Curie, RU-141980 Dubna, Russia

author

A. Wieck

• Ruhr-Universität Bochum, 150 Universitätsstr., D-44780 Bochum, Germany

author

T. Kołtunowicz

• Lublin University of Technology, Nadbystrzycka 38d, 20-618 Lublin, Poland

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Identifiers

DOI

10.12693/APhysPolA.120.111