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2011 | 120 | 1 | 111-114
Article title

Effects of Fluences of Irradiation with 107 MeV Krypton Ions on the Recovery Charge of Silicon p^{+}n-Diodes

Content
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Languages of publication
EN
Abstracts
EN
The diodes manufactured on the wafers of single-crystalline silicon uniformly doped with phosphorus are studied. The wafer resistivity was 90 Ω cm. Krypton ions are implanted to the side of the p^{+}-region of diodes (energy 107 MeV, fluence Φp from 5 × 10^7 to 4 × 10^9 cm^{-2}). It is shown that recovery charge Q_{rr} is inversely proportional to the square root of the irradiation fluence value Φp. When the fluence increases, the part of the recovery charge Q_{rrA}, due to the high reverse conductance phase, decreases faster than the value Q_{rr}.
Keywords
EN
Publisher

Year
Volume
120
Issue
1
Pages
111-114
Physical description
Dates
published
2011-07
Contributors
author
  • Belarussian State University, 4 Nezavisimosti, BY-220030, Minsk, Belarus
author
  • Belarussian State University, 4 Nezavisimosti, BY-220030, Minsk, Belarus
author
  • Belarussian State University, 4 Nezavisimosti, BY-220030, Minsk, Belarus
author
  • JSK Integral, 12 Korzhenevskogo, BY-220108 Minsk, Belarus
author
  • JSK Integral, 12 Korzhenevskogo, BY-220108 Minsk, Belarus
author
  • Joint Institute for Nuclear Research, 6 Joliot-Curie, RU-141980 Dubna, Russia
author
  • Ruhr-Universität Bochum, 150 Universitätsstr., D-44780 Bochum, Germany
  • Lublin University of Technology, Nadbystrzycka 38d, 20-618 Lublin, Poland
References
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Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv120n128kz
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