Influence of Annealing on the Electrical Properties οf Cz-Si Wafers Previously Subjected to the Hydrogen Ion-Beam Treatment

• Authors: A. Fedotov , O. Korolik , A. Mazanik , T. Kołtunowicz , P. Żukowski
• Languages of publication: EN

Abstracts

EN

The main goal of this work is to establish the influence of annealing on the properties of Cz-Si wafers previously subjected to the hydrogen ion-beam treatment at 25 or 300-350°C. It is demonstrated by the conducted study that, despite similarity in the effects of the hydrogen ion-beam treatment at different temperatures on some electrical properties of the wafers (photovoltage spectra, thermoelectromotive force sign), thermal stability of changes in these properties due to the hydrogen ion-beam treatment depends on the hydrogenation temperature.

Keywords

EN

61.72.uf; 81.40.Ef

Discipline

• 81.40.Ef: Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
• 61.72.uf: Ge and Si

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2011
• Volume: 120
• Issue: 1
• Pages: 108-110

Dates

published

2011-07

Contributors

author

A. Fedotov

• Belarussian State University, 4, Nezavisimosti St., 220030 Minsk, Belarus

author

O. Korolik

• Belarussian State University, 4, Nezavisimosti St., 220030 Minsk, Belarus

author

A. Mazanik

• Belarussian State University, 4, Nezavisimosti St., 220030 Minsk, Belarus

author

T. Kołtunowicz

• Lublin University of Technology, Nadbystrzycka 38, 20-618 Lublin, Poland

author

P. Żukowski

• Lublin University of Technology, Nadbystrzycka 38, 20-618 Lublin, Poland

References

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Identifiers

DOI

10.12693/APhysPolA.120.108