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Number of results
2011 | 120 | 1 | 108-110
Article title

Influence of Annealing on the Electrical Properties οf Cz-Si Wafers Previously Subjected to the Hydrogen Ion-Beam Treatment

Content
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EN
Abstracts
EN
The main goal of this work is to establish the influence of annealing on the properties of Cz-Si wafers previously subjected to the hydrogen ion-beam treatment at 25 or 300-350°C. It is demonstrated by the conducted study that, despite similarity in the effects of the hydrogen ion-beam treatment at different temperatures on some electrical properties of the wafers (photovoltage spectra, thermoelectromotive force sign), thermal stability of changes in these properties due to the hydrogen ion-beam treatment depends on the hydrogenation temperature.
Keywords
EN
Contributors
author
  • Belarussian State University, 4, Nezavisimosti St., 220030 Minsk, Belarus
author
  • Belarussian State University, 4, Nezavisimosti St., 220030 Minsk, Belarus
author
  • Belarussian State University, 4, Nezavisimosti St., 220030 Minsk, Belarus
  • Lublin University of Technology, Nadbystrzycka 38, 20-618 Lublin, Poland
author
  • Lublin University of Technology, Nadbystrzycka 38, 20-618 Lublin, Poland
References
  • 1. S.J. Pearton, J.W. Corbett, M. Stavola, Hydrogen in Crystalline Semiconductors, Springer Verlag, Berlin 1992
  • 2. R. Luedemann, Mater. Sci. Eng. B 58, 86 (1999)
  • 3. M. Bruel, Nucl. Instrum. Methods Phys. Res. B 108, 313 (1996)
  • 4. O. Zinchuk, A. Saad, N. Drozdov, A. Fedotov, S. Kobeleva, A. Mazanik, A. Patryn, V. Pilipenko, A. Pushkarchuk, J. Mater. Sci. Mater. Electron. 19, 273 (2008)
  • 5. Y. Ohmura, Y. Zohta, M. Kanazawa, Phys. Status Solidi A 15, 93 (1973)
  • 6. H.J. Stein, S. Hahn, Appl. Phys. Lett. 56, 63 (1990)
  • 7. O. Zinchuk, N. Drozdov, A. Fedotov, A. Mazanik, N. Krekotsen, V. Ukhov, Vacuum 83, S99 (2009)
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv120n127kz
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