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2011 | 120 | 1 | 105-107
Article title

Formation of Cone-Shaped Inclusions and Line Defects on the Cz-Si Wafer Surface by the Helium Implantation and DC Nitrogen Plasma Treatment

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Languages of publication
EN
Abstracts
EN
The general goal of this work is to investigate the defects formed on the surface of the Cz-Si wafers subjected to helium implantation, vacuum annealing and nitrogen plasma treatment. The performed scanning electron microscopy study has shown that in the general case two types of surface defects can be formed: cone-shaped inclusions with the base diameter of 0.2-2 μm and the ratio of diameter to height of approximately 1:1, as well as crystallographically oriented line defects with the length equal to 0.2-2 μm. The concentration of these defects depends on the conditions of implantation and plasma treatment.
Keywords
EN
Publisher

Year
Volume
120
Issue
1
Pages
105-107
Physical description
Dates
published
2011-07
Contributors
  • Belarussian National Technical University, 65, Nezavisimosti St., 220063 Minsk, Belarus
author
  • Belarussian State University, 4, Nezavisimosti St., 220030 Minsk, Belarus
  • Belarussian National Technical University, 65, Nezavisimosti St., 220063 Minsk, Belarus
  • Lublin University of Technology, Nadbystrzycka 38, 20-618 Lublin, Poland
author
  • Lublin University of Technology, Nadbystrzycka 38, 20-618 Lublin, Poland
References
  • 1. N.V. Frantskevich, A.V. Frantskevich, A.K. Fedotov, A.V. Mazanik, Solid State Phenomena 156-158, 91 (2010)
  • 2. B. Terreault, Physica Status Solidi A 204, 2129 (2007)
  • 3. A.V. Frantskevich, A.M. Saad, A.V. Mazanik, N.V. Frantskevich, A.K. Fedotov, V.S. Kulinkauskas, A.A. Patryn, J. Mater. Sci. Mater. Electron. 19, S239 (2008)
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv120n126kz
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