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Abstracts
The general goal of this work is to investigate the defects formed on the surface of the Cz-Si wafers subjected to helium implantation, vacuum annealing and nitrogen plasma treatment. The performed scanning electron microscopy study has shown that in the general case two types of surface defects can be formed: cone-shaped inclusions with the base diameter of 0.2-2 μm and the ratio of diameter to height of approximately 1:1, as well as crystallographically oriented line defects with the length equal to 0.2-2 μm. The concentration of these defects depends on the conditions of implantation and plasma treatment.
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Journal
Year
Volume
Issue
Pages
105-107
Physical description
Dates
published
2011-07
Contributors
author
- Belarussian National Technical University, 65, Nezavisimosti St., 220063 Minsk, Belarus
author
- Belarussian State University, 4, Nezavisimosti St., 220030 Minsk, Belarus
author
- Belarussian National Technical University, 65, Nezavisimosti St., 220063 Minsk, Belarus
author
- Lublin University of Technology, Nadbystrzycka 38, 20-618 Lublin, Poland
author
- Lublin University of Technology, Nadbystrzycka 38, 20-618 Lublin, Poland
References
- 1. N.V. Frantskevich, A.V. Frantskevich, A.K. Fedotov, A.V. Mazanik, Solid State Phenomena 156-158, 91 (2010)
- 2. B. Terreault, Physica Status Solidi A 204, 2129 (2007)
- 3. A.V. Frantskevich, A.M. Saad, A.V. Mazanik, N.V. Frantskevich, A.K. Fedotov, V.S. Kulinkauskas, A.A. Patryn, J. Mater. Sci. Mater. Electron. 19, S239 (2008)
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv120n126kz