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2011 | 120 | 1 | 87-90
Article title

Structure and Optical Properties of Silicon Layers with GaSb Nanocrystals Created by Ion-Beam Synthesis

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EN
Abstracts
EN
We have studied the ion-beam synthesis of GaSb nanocrystals in Si by high-fluence "hot" implantation of Sb and Ga ions followed by thermal annealing. The Rutherford backscattering, transmission electron microscopy/transmission electron diffraction, Raman spectroscopy and photoluminescence were used to characterize the implanted layers. It was found that the nanocrystal size increases from 5 to 60 nm in the samples annealed at 900°C up to 20-90 nm in those annealed at 1100°C. For the samples annealed at 900°C a broad band in the region of 0.75-1.05 eV is registered in the photoluminescence spectra. The nature of this photoluminescence band is discussed.
Keywords
Contributors
author
  • Belarussian State University, Nezavisimosti ave. 4, 220030 Minsk, Belarus
author
  • Belarussian State University, Nezavisimosti ave. 4, 220030 Minsk, Belarus
author
  • Belarussian State University, Nezavisimosti ave. 4, 220030 Minsk, Belarus
author
  • Scientific and Practical Materials Research Center, National Academy of Sciences of Belarus, P. Brovki 17, 220072 Minsk, Belarus
author
  • Belarussian State University, Nezavisimosti ave. 4, 220030 Minsk, Belarus
author
  • Institut für Festkörperphysik, Friedrich-Schiller-Universität Jena, Max-Wien-Platz 1, D-07743 Jena, Germany
author
  • Institut für Festkörperphysik, Friedrich-Schiller-Universität Jena, Max-Wien-Platz 1, D-07743 Jena, Germany
author
  • Technical University of Lublin, Nadbystrzycka 38A, 20-618 Lublin, Poland
References
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Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv120n122kz
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