Structure and Optical Properties of Silicon Layers with GaSb Nanocrystals Created by Ion-Beam Synthesis

• Authors: F. Komarov , L. Vlasukova , O. Milchanin , A. Mudryi , B. Dunetz , W. Wesch , E. Wendler , C. Karwat
• Languages of publication: EN

Abstracts

EN

We have studied the ion-beam synthesis of GaSb nanocrystals in Si by high-fluence "hot" implantation of Sb and Ga ions followed by thermal annealing. The Rutherford backscattering, transmission electron microscopy/transmission electron diffraction, Raman spectroscopy and photoluminescence were used to characterize the implanted layers. It was found that the nanocrystal size increases from 5 to 60 nm in the samples annealed at 900°C up to 20-90 nm in those annealed at 1100°C. For the samples annealed at 900°C a broad band in the region of 0.75-1.05 eV is registered in the photoluminescence spectra. The nature of this photoluminescence band is discussed.

Keywords

EN

61.80.-x; 61.72.Ff; 63.20.-e; 78.66.-w

Discipline

• 78.66.-w: Optical properties of specific thin films(for optical properties of low-dimensional, mesoscopic, and nanoscale materials, see 78.67.-n; for optical properties of surfaces, see 78.68.+m)
• 61.72.Ff: Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
• 61.80.-x: Physical radiation effects, radiation damage(for photochemical reactions, see 82.50.-m; for effects of ionizing radiation on biological systems, see 87.53.-j)
• 63.20.-e: Phonons in crystal lattices(for phonons in superconductors, see 74.25.Kc; see also 43.35.Gk Phonons in crystal lattice, quantum acoustics—in Acoustics Appendix)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2011
• Volume: 120
• Issue: 1
• Pages: 87-90

Dates

published

2011-07

Contributors

author

F. Komarov

• Belarussian State University, Nezavisimosti ave. 4, 220030 Minsk, Belarus

author

L. Vlasukova

• Belarussian State University, Nezavisimosti ave. 4, 220030 Minsk, Belarus

author

O. Milchanin

• Belarussian State University, Nezavisimosti ave. 4, 220030 Minsk, Belarus

author

A. Mudryi

• Scientific and Practical Materials Research Center, National Academy of Sciences of Belarus, P. Brovki 17, 220072 Minsk, Belarus

author

B. Dunetz

• Belarussian State University, Nezavisimosti ave. 4, 220030 Minsk, Belarus

author

W. Wesch

• Institut für Festkörperphysik, Friedrich-Schiller-Universität Jena, Max-Wien-Platz 1, D-07743 Jena, Germany

author

E. Wendler

• Institut für Festkörperphysik, Friedrich-Schiller-Universität Jena, Max-Wien-Platz 1, D-07743 Jena, Germany

author

C. Karwat

• Technical University of Lublin, Nadbystrzycka 38A, 20-618 Lublin, Poland

References

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• 2. F.F. Komarov, L.A. Vlasukova, O.M. Milchanin, P.I. Gaiduk, V.N. Yuvchenko, S.S. Grechnyi, Vacuum 78, 361 (2005)
• 3. A.L. Tchebotareva, J.L. Brebner, S. Roorda, C.W. White, Nucl. Instrum. Methods Phys. Res. B 175-177, 187 (2001)
• 4. F. Komarov, L. Vlasukova, W. Wesch, A. Kamarou, O. Milchanin, S. Grechnyi, A. Mudryi, A. Ivaniukovich, Nucl. Instrum. Methods Phys. Res. B 266, 3557 (2008)
• 5. A. Meldrum, S. Honda, C.W. White, R.A. Zuhr, L.A. Boatner, J. Mater. Res. 16, 2670 (2001)
• 6. M. Landölt, J. Börnstein, Numerical Data and Functional Relationships in Science and Technology. New Series, Springer-Verlag, Berlin 1982
• 7. M.J. Pelletier, Analytical Applications of Raman Spectroscopy, Blackwell-Science, Oxford 1999

Identifiers

DOI

10.12693/APhysPolA.120.87