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2011 | 120 | 1 | 60-62
Article title

Synthesis of Bismuth Oxide Thin Films Deposited by Reactive Magnetron Sputtering

Content
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Languages of publication
EN
Abstracts
EN
In this work Bi_2O_3 thin films were deposited onto the Si (111) and soda lime glass substrates by the reactive direct current magnetron sputtering system using pure Bi as a sputtering target. The dependences of electro-optical characteristics of the films on the substrate type and temperature were investigated. Transmittance and reflectance of the Bi_2O_3 films were measured with ultraviolet and visible light spectrometer. It was found that the substrate temperature during deposition has a very strong influence on the phase components of thin films. The results indicate that the direct allowed transitions dominate in the films obtained in this work. For the direct allowed transitions the band gap energy is found to be about 1.98 eV and 2.2 eV. The reflectance of thin bismuth oxide film depends on the substrate. Small transparency of thin films grown on glass is more related to large reflectance than absorption. The reflectance spectra of the bismuth oxide thin films deposited on the Si substrates show higher quality of optical characteristics compared to the samples deposited on glass substrates.
Keywords
EN
Year
Volume
120
Issue
1
Pages
60-62
Physical description
Dates
published
2011-07
References
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Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv120n115kz
Identifiers
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