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2011 | 120 | 1 | 56-59
Article title

Optical Pattern Fabrication in Amorphous Silicon Carbide with High-Energy Focused Ion Beams

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EN
Abstracts
EN
Topographic and optical patterns have been fabricated in a-SiC films with a focused high-energy (1 MeV) H^{+} and He^{+} ion beam and examined with near-field techniques. The patterns have been characterized with atomic force microscopy and scanning near-field optical microscopy to reveal local topography and optical absorption changes as a result of the focused high-energy ion beam induced modification. Apart of a considerable thickness change (thinning tendency), which has been observed in the ion-irradiated areas, the near-field measurements confirm increases of optical absorption in these areas. Although the size of the fabricated optical patterns is in the micron-scale, the present development of the technique allows in principle writing optical patterns up to the nanoscale (several tens of nanometers). The observed values of the optical contrast modulation are sufficient to justify the efficiency of the method for optical data recording using high-energy focused ion beams.
Keywords
Year
Volume
120
Issue
1
Pages
56-59
Physical description
Dates
published
2011-07
References
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Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv120n114kz
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