Study of Structure Densification in TiO_2 Coatings Prepared by Magnetron Sputtering under Low Pressure of Oxygen Plasma Discharge

• Authors: J. Domaradzki , D. Kaczmarek , E. Prociow , Z. Radzimski
• Languages of publication: EN

Abstracts

EN

Current work presents results of studies on structural and optical properties of the TiO_2 thin films prepared by reactive magnetron sputtering. Oxide thin films were deposited from metallic targets using oxygen gas only instead of usually used mixture of Ar-O_2. Additionally, an increased amplitude of unipolar pulses powering the magnetron has been applied. It is shown that all prepared coatings were stoichiometric and by changing only the discharge voltage it is possible to influence the resulting structural phase and optical properties of prepared thin films. Depending on conditions of magnetron powering, TiO_2 thin films had either the anatase structure with refraction index n = 2.1 (λ = 500 nm) or a high temperature stable rutile structure with n = 2.52 (λ = 500 nm).

Keywords

EN

81.15.Cd; 81.15.-z; 68.55.-a; 81.15.Aa

Discipline

• 81.15.Aa: Theory and models of film growth
• 81.15.-z: Methods of deposition of films and coatings; film growth and epitaxy(for structure of thin films, see 68.55.-a; see also 85.40.Sz Deposition technology in microelectronics; for epitaxial dielectric films, see 77.55.Px)
• 81.15.Cd: Deposition by sputtering
• 68.55.-a: Thin film structure and morphology(for methods of thin film deposition, film growth and epitaxy, see 81.15.-z)

• Journal: Acta Physica Polonica A
• Year: 2011
• Volume: 120
• Issue: 1
• Pages: 49-52

Dates

published

2011-07

Contributors

author

J. Domaradzki

• Faculty of Microsystem Electronics and Photonics, Wrocław University of Technology, Janiszewskiego 11/17, 50-372 Wrocław, Poland

author

D. Kaczmarek

• Faculty of Microsystem Electronics and Photonics, Wrocław University of Technology, Janiszewskiego 11/17, 50-372 Wrocław, Poland

author

E. Prociow

• Faculty of Microsystem Electronics and Photonics, Wrocław University of Technology, Janiszewskiego 11/17, 50-372 Wrocław, Poland

author

Z. Radzimski

• RaEn Tech, Inc., 4800 Eisan Avenue, Reno, NV 89506, USA

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Identifiers

DOI

10.12693/APhysPolA.120.49