Structure and Electron-Transport Properties of Photoresist Implanted by Sb^{+} Ions

• Authors: N. Vabishchevich , D. Brinkevich , V. Volobuev , M. Lukashevich , V. Prosolovich , Yu. Sidorenko , V. Odzhaev , J. Partyka
• Languages of publication: EN

Abstracts

EN

Morphology and electron-transport properties in the photoresist-silicon structures implanted by 60 keV antimony in the fluence range 1 × 10^{15} ÷ 5 × 10^{16} cm^{-2} with the ion current density 4 μA/cm^2 have been investigated. Microhardness increases with the increasing fluence. Non-monotonous dependence of microhardness on the depth in the implanted structures was observed. Transition from insulating to the metallic regime of conductivity was not observed.

Keywords

EN

85.40.Hp

Discipline

• 85.40.Hp: Lithography, masks and pattern transfer

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2011
• Volume: 120
• Issue: 1
• Pages: 46-48

Dates

published

2011-07

Contributors

author

N. Vabishchevich

• Polotski State University, Blohina str. 29, Novopolotsk-211440, Belarus

author

D. Brinkevich

• Belarussian State University, Nezavisimosti ave. 4, Minsk-220050, Belarus

author

V. Volobuev

• Belarussian State University, Nezavisimosti ave. 4, Minsk-220050, Belarus

author

M. Lukashevich

• Belarussian State University, Nezavisimosti ave. 4, Minsk-220050, Belarus

author

V. Prosolovich

• Belarussian State University, Nezavisimosti ave. 4, Minsk-220050, Belarus

author

Yu. Sidorenko

• Belarussian State University, Nezavisimosti ave. 4, Minsk-220050, Belarus

author

V. Odzhaev

• Belarussian State University, Nezavisimosti ave. 4, Minsk-220050, Belarus

author

J. Partyka

• Lublin University of Technology, Nadbystrzycka 38D, 20-618 Lublin, Poland

References

• 1. V.N. Popok, in: Surface Science Research, Ed. Ch.P. Norris, Nova Science Publ., New York 2005, p. 147
• 2. I. Azarko, Yu. Bumai, V. Volobuev, P. Zukowski, M. Lukashevich, V. Odzhaev, in: Proc. 6th Int. Conf. NEET-2009, Zakopane (Poland), Lublin University of Technology, Lublin 2009, p. 144
• 3. A.R. Shugurov, A.V. Panin, K.V. Oskomov, Fiz. Tverd. Tela 50, 1007 (2008)
• 4. M.G. Lukashevich, V.N. Popok, V.B. Odzhaev, S.M. Lukashevich, R.I. Khaibullin, V.V. Bazarov, Dokl. NAN RB 48, 42 (2004)
• 5. N.F. Mott, E.A. Davis, Electronic Processes in Non-crystalline Materials, Clarendon Press, Oxford 1979
• 6. B. Abeles, P. Sheng, M. Coutts, Y. Arie, Adv. Phys. 24, 407 (1975)
• 7. B.I. Shklovskii, F.L. Efroc, Electron Properties of Doped Semiconductors, Nauka, Moskva 1979, p. 416 (in Russian)

Identifiers

DOI

10.12693/APhysPolA.120.46