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2011 | 120 | 1 | 46-48
Article title

Structure and Electron-Transport Properties of Photoresist Implanted by Sb^{+} Ions

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Languages of publication
EN
Abstracts
EN
Morphology and electron-transport properties in the photoresist-silicon structures implanted by 60 keV antimony in the fluence range 1 × 10^{15} ÷ 5 × 10^{16} cm^{-2} with the ion current density 4 μA/cm^2 have been investigated. Microhardness increases with the increasing fluence. Non-monotonous dependence of microhardness on the depth in the implanted structures was observed. Transition from insulating to the metallic regime of conductivity was not observed.
Keywords
EN
Year
Volume
120
Issue
1
Pages
46-48
Physical description
Dates
published
2011-07
References
  • 1. V.N. Popok, in: Surface Science Research, Ed. Ch.P. Norris, Nova Science Publ., New York 2005, p. 147
  • 2. I. Azarko, Yu. Bumai, V. Volobuev, P. Zukowski, M. Lukashevich, V. Odzhaev, in: Proc. 6th Int. Conf. NEET-2009, Zakopane (Poland), Lublin University of Technology, Lublin 2009, p. 144
  • 3. A.R. Shugurov, A.V. Panin, K.V. Oskomov, Fiz. Tverd. Tela 50, 1007 (2008)
  • 4. M.G. Lukashevich, V.N. Popok, V.B. Odzhaev, S.M. Lukashevich, R.I. Khaibullin, V.V. Bazarov, Dokl. NAN RB 48, 42 (2004)
  • 5. N.F. Mott, E.A. Davis, Electronic Processes in Non-crystalline Materials, Clarendon Press, Oxford 1979
  • 6. B. Abeles, P. Sheng, M. Coutts, Y. Arie, Adv. Phys. 24, 407 (1975)
  • 7. B.I. Shklovskii, F.L. Efroc, Electron Properties of Doped Semiconductors, Nauka, Moskva 1979, p. 416 (in Russian)
Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv120n111kz
Identifiers
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