Influence of Preparation Technique on the Properties of In:CdS Thin Films

• Authors: M. Dhanam , B. Kavitha , B. Maheswari , G. Jesna
• Languages of publication: EN

Abstracts

EN

This paper presents the results of the structural, morphological and optical analysis of In:CdS thin films prepared by chemical bath deposition and successive ionic layer adsorption and reaction techniques. X-ray diffraction patterns showed the hexagonal phase of cadmium sulfide and it has been found that the amount of atomic percentage of indium increases the intensity of the preferential orientation (002) plane in chemical bath deposition In:CdS thin films. Compositional analysis confirmed the replacement of Cd ions by In ions and morphological analysis confirmed the lesser grain size and dense morphology in chemical bath deposition In:CdS thin films. Increase in In concentration in successive ionic layer adsorption and reaction In:CdS thin films leads to an increase in the optical transmission up to 80% and the higher band gap and therefore the results of this investigation enabled to understand the significance of preparation technique.

Keywords

EN

81.15.-z; 78.66.Hf; 61.05.cp; 68.37.-d

Discipline

• 78.66.Hf: II-VI semiconductors
• 61.05.cp: X-ray diffraction
• 68.37.-d: Microscopy of surfaces, interfaces, and thin films
• 81.15.-z: Methods of deposition of films and coatings; film growth and epitaxy(for structure of thin films, see 68.55.-a; see also 85.40.Sz Deposition technology in microelectronics; for epitaxial dielectric films, see 77.55.Px)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2011
• Volume: 119
• Issue: 6
• Pages: 885-889

Dates

published

2011-06

received

2010-07-13

(unknown)

2010-12-06

Contributors

author

M. Dhanam

• PG and Research Department of Physics, Kongunadu Arts and Science College, Coimbatore-641029, Tamilnadu, India

author

B. Kavitha

• PG and Research Department of Physics, Kongunadu Arts and Science College, Coimbatore-641029, Tamilnadu, India

author

B. Maheswari

• PG and Research Department of Physics, Kongunadu Arts and Science College, Coimbatore-641029, Tamilnadu, India

author

G. Jesna

• PG and Research Department of Physics, Kongunadu Arts and Science College, Coimbatore-641029, Tamilnadu, India

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Identifiers

DOI

10.12693/APhysPolA.119.885