Fabrication and Characterization of GaN/Polymer Composite p-n Junction with PEDOT Nanoparticle Interface Layer

• Authors: M. Kim , S. Jin , H. Choi , G. Kim , K. Yim , S. Kim , G. Nam , H. Yoon , Y. Kim , D. Lee , Jin Kim , Jong Kim , J. Leem
• Languages of publication: EN

Abstracts

EN

A heavily Si-doped GaN/polymer hybrid structure with p-type poly(3,4-ethylene-dioxythiophene):beta-1,3-glucan (PEDOT nanoparticle) interface layer has been fabricated. The Si-doped GaN thin film with carrier concentration of 1 × 10^{19} cm^{-3} was grown by metal-organic chemical vapor deposition. The PEDOT nanoparticle with various sizes ranging from 60 to 120 nm was synthesized via a miniemulsion polymerization process. The electrical conductivity of the PEDOT nanoparticle is less than 1.2 S/cm. The current-voltage (I-V) characteristic of the hybrid structure shows diode-like behavior. The I-V characteristic was examined in the framework of the thermionic emission model. The ideality factor of the structure without PEDOT nanoparticle interface layer is 12.9. However, the ideality factor of the hybrid structure with PEDOT nanoparticle interface layer is obtained as 1.9. The value of ideality factor is dramatically decreased by inserting the PEDOT nanoparticle interface layer.

Keywords

EN

73.61.Ey; 81.15.Gh

Discipline

• 81.15.Gh: Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)(for chemistry of MOCVD, see 82.33.Ya in physical chemistry and chemical physics)
• 73.61.Ey: III-V semiconductors

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2011
• Volume: 119
• Issue: 6
• Pages: 875-879

Dates

published

2011-06

received

2010-12-23

Contributors

author

M. Kim

• Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University, Gimhae 621-749, Republic of Korea

author

S. Jin

• Ink Technology Center, Ink Tec. Co. Ltd., Pyeongtaek 451-821, Republic of Korea

author

H. Choi

• Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University, Gimhae 621-749, Republic of Korea

author

G. Kim

• Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University, Gimhae 621-749, Republic of Korea

author

K. Yim

• Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University, Gimhae 621-749, Republic of Korea

author

S. Kim

• School of Nano Engineering, Inje University, Gimhae 621-749, Republic of Korea

author

G. Nam

• School of Nano Engineering, Inje University, Gimhae 621-749, Republic of Korea

author

H. Yoon

• School of Nano Engineering, Inje University, Gimhae 621-749, Republic of Korea

author

Y. Kim

• Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University, Gimhae 621-749, Republic of Korea

author

D. Lee

• Epi-manufacturing Technology, Samsung LED Co., Ltd., Suwon 443-373, Republic of Korea

author

Jin Kim

• School of Nano Engineering, Inje University, Gimhae 621-749, Republic of Korea

author

Jong Kim

• Department of Physics, Yeungnam University, Gyeongsan 712-749, Republic of Korea

author

J. Leem

• Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University, Gimhae 621-749, Republic of Korea
• Ink Technology Center, Ink Tec. Co. Ltd., Pyeongtaek 451-821, Republic of Korea

References

• 1. S. Nakamura, T. Mukai, M. Senoh, Appl. Phys. Lett. 64, 28 (1994)
• 2. M.A. Khan, J.N. Kuznia, A.R. Bhattarai, D.T. Olson, Appl. Phys. Lett. 62, 1786 (1993)
• 3. M.A. Khan, A.R. Bhattarai, J.N. Kuznia, D.T. Olson, Appl. Phys. Lett. 63, 1214 (1993)
• 4. M.A. Khan, J.N. Kuznia, D.T. Olson, J.N. Van Hone, M. Blasingame, L.F. Reitz, Appl. Phys. Lett. 60, 2917 (1992)
• 5. M.A. Khan, J.N. Kuznia, D.T. Olson, J.M. Van Hone, M. Blasingame, L.F. Reitz, Appl. Phys. Lett. 63, 1 (1993)
• 6. S. Nakamura, T. Mukai, M. Senoh, Jpn. J. Appl. Phys. 31, 2883 (1992)
• 7. G.-C. Yi, B.W. Wessels, Appl. Phys. Lett. 69, 3028 (1996)
• 8. J.W. Orton, C.T. Foxon, Semicond. Sci. Technol. 13, 310 (1998)
• 9. A. Usikov, O. Kovalenkov, V. Soukhoveev, V. Ivantsov, A. Syrkin, V. Dmitriev, A.Y. Nikiforov, S.G. Sundaresan, S.J. Jeliazkov, A.V. Davydov, Phys. Status Solidi C 6, 1829 (2008)
• 10. X.Q. Shen, M. Shimizu, H. Okumura, F.J. Xu, B. Shen, G.Y. Zhang, J. Cryst. Growth 311, 2049 (2009)
• 11. J.H. Yang, S.M. Kang, D.V. Dinh, D.H. Yoon, Thin Solid Films 517, 5057 (2009)
• 12. X.W. Sun, J.Z. Huang, J.X. Wang, Z. Xu, Nano Lett. 8, 1219 (2008)
• 13. M. Willander, O. Nur, N. Bano, K. Sultana, New J. Phys. 11, 125020 (2009)
• 14. M. Nakano, A. Tsukazaki, R.Y. Gunji, K. Ueno, A. Ohtomo, T. Fukumura, Appl. Phys. Lett. 88, 142113 (2007)
• 15. D.M. Welsh, A. Kumar, E.W. Meijer, J.R. Reynolds, Adv. Mater. 11, 1379 (1999)
• 16. A. Laforgue, P. Simon, J.F. Fauvarque, M. Mastragostino, F. Soavi, J.F. Arrau, E. Rossi, S. Saguatti, J. Electrochem. Soc. 150, A645 (2003)
• 17. D.M. Leeuw, P.A. Kraakman, P.E.G. Bongaerts, C.M.J. Mutsaers, D.B.M. Klaassen, Synth. Met. 66, 263 (1994)
• 18. X. Gong, D. Moses, A.J. Heeger, S. Liu, A.K.Y. Jen, Appl. Phys. Lett. 83, 193 (2003)
• 19. J. Inoue, K. Yamagishi, M. Yamashita, J. Cryst. Growth 298, 782 (2007)
• 20. H. Yoon, M. Chang, J. Jang, Adv. Funct. Mater. 17, 431 (2007)
• 21. L. Groenendal, G. Zotti, P.-H. Aubert, S.M. Waybright, J.R. Reynolds, Adv. Mater. 15, 855 (2003)
• 22. T. Imae, C. Li, Macromolecules 37, 2411 (2004)
• 23. K. Müller, M. Klapper, K. Müllen, Macromol. Rapid Commun. 27, 586 (2006)
• 24. X. Zhang, J.-S. Lee, G.S. Lee, D.-K. Cha, M.J. Kim, D.J. Yang, S.K. Manohar, Macromolecules 39, 470 (2006)
• 25. M.G. Han, S.P. Armes, Langmuir 19, 4523 (2003)
• 26. X. Sun, M. Hanger, Macromolecules 40, 8537 (2007)
• 27. J.-C. Song, S.-H. Lee, I.-H. Lee, K.-W. Seol, S. Kannappan, C.-R. Lee, J. Cryst. Growth 308, 321 (2007)
• 28. K. Kim, J. Choi, M. Jung, D.H. Woo, Jpn. J. Appl. Phys. 47, 6354 (2008)
• 29. L.S. Chuah, Z. Hassan, H.A. Hassan, N.M. Ahmed, J. Alloys Comp. 481, L15 (2009)
• 30. Z.N. Dmitri, L.-W. Zuzanna, G. Yan, H. Evelyn, J. Electron. Mater. 35, 1543 (2006)
• 31. J.M. Shah, Y.L. Li, T. Gessmann, E.F. Schubert, J. Appl. Phys. 94, 2627 (2003)
• 32. M. Campos, G. Casalbore-Miceli, N. Camaioni, J. Phys. D, Appl. Phys. 28, 2123 (1995)
• 33. K. Mayes, A. Yasan, R. McClintock, D. Shiell, S.R. Darvish, P. Kung, M. Razeghi, Appl. Phys. Lett. 84, 1046 (2004)
• 34. P. Deb, H. Kim, Y. Qin, R. Lahiji, M. Oliver, R. Reifenberger, T. Sands, Nano Lett. 6, 2893 (2006)
• 35. A. Motayed, A.V. Davydov, M.D. Vaudin, I. Levin, J. Melngailis, S.N. Mohammad, J. Appl. Phys. 100, 024306 (2006)

Identifiers

DOI

10.12693/APhysPolA.119.875