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2011 | 119 | 6 | 774-777
Article title

Vacancy-Fluorine Clusters in Silicon

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Abstracts
EN
Fluorine (F) doping and the formation of F-vacancy (F_{n}V_{m}) clusters have been extensively studied in silicon (Si) as they can suppress the transient self-interstitial mediated diffusion of boron (B). Recent experimental studies by Bernardi et al. revealed that there is no significant concentration of F_{n}V_{m} clusters (for n ≥ 4, m ≥ 1) in disagreement with a number of density functional theory studies. In the present study we use electronic structure calculations to evaluate the binding energies of F_{n}V_{m} clusters and V_{n} clusters. The significant binding energies of the V _{n} clusters reveals that the concentration of the large F_{n}V_{m} clusters (n ≥4, m ≥1) will be limited compared to the V_{n} clusters or even smaller clusters.
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Contributors
author
  • Department of Materials, Imperial College, London SW7 2AZ, United Kingdom
author
  • Kharkov National University, 4 Svoboda Sq., 61077 Kharkov, Ukraine
author
  • Kharkov National University, 4 Svoboda Sq., 61077 Kharkov, Ukraine
author
  • Kharkov National University, 4 Svoboda Sq., 61077 Kharkov, Ukraine
  • IPA _Instituto Superior Autónomo de Estudos Politécnicos, Rua de Xabregas, 20, 1° 1900-440 Lisboa, Portugal
author
  • Adam Mickiewicz University, Umultowska 85, 61-614 Poznań, Poland
  • Adam Mickiewicz University, Umultowska 85, 61-614 Poznań, Poland
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Document Type
Publication order reference
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YADDA identifier
bwmeta1.element.bwnjournal-article-appv119n607kz
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