Studies of Magnetoresistance in GaAs:Te Crystals with Structural Disorder at Doping Limit

• Authors: T. Tarkowski , T. Słupiński , K. Karpierz
• Languages of publication: EN

Abstracts

EN

Transverse magnetoresistance was studied in monocrystalline GaAs:Te doped above the equilibrium doping limit and annealed to partially deactivate donor impurities. It is shown that in a sample with partial deactivation of Te impurities, which exhibits structural fluctuations in microscale, both strong positive and some negative magnetoresistances arise, which are difficult to understand within the relaxation time approximation in degenerated homogeneous semiconductor. It is discussed that a consideration of the role of spatial fluctuations (in carrier concentration, conductivity, etc.), e.g. as proposed by Herring, allows for an understanding of positive component of magnetoresistance observed in the sample with a distinct microscopic structural disorder. With the aim to better understand the transport in GaAs:Te, a model material doped above the doping limit, we discuss both positive and negative components of measured magnetoresistance.

Keywords

EN

61.72.-y; 61.72.uj; 72.20.My

Discipline

• 61.72.uj: III-V and II-VI semiconductors
• 72.20.My: Galvanomagnetic and other magnetotransport effects
• 61.72.-y: Defects and impurities in crystals; microstructure(for radiation induced defects, see 61.80.-x; for defects in surfaces, interfaces, and thin films, see 68.35.Dv and 68.55.Ln; see also 85.40.Ry Impurity doping, diffusion, and ion implantation technology; for effects of crystal defects and doping on superconducting transition temperature, see 74.62.Dh)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2011
• Volume: 119
• Issue: 5
• Pages: 726-728

Dates

published

2011-05

Contributors

author

T. Tarkowski

• Institute of Experimental Physics, Faculty of Physics, University of Warsaw, Hoża 69, 00-681 Warsaw, Poland

author

T. Słupiński

• Institute of Experimental Physics, Faculty of Physics, University of Warsaw, Hoża 69, 00-681 Warsaw, Poland

author

K. Karpierz

• Institute of Experimental Physics, Faculty of Physics, University of Warsaw, Hoża 69, 00-681 Warsaw, Poland

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Identifiers

DOI

10.12693/APhysPolA.119.726