Electronic Properties of Thin HfO_2 Films Fabricated by Atomic Layer Deposition on 4H-SiC

• Authors: A. Taube , S. Gierałtowska , T. Gutt , T. Małachowski , I. Pasternak , T. Wojciechowski , W. Rzodkiewicz , M. Sawicki , A. Piotrowska
• Languages of publication: EN

Abstracts

EN

Applicability of thin HfO_2 films as gate dielectric for SiC MOSFET transistor is reported. Layers characterisation was done by means of atomic force microscopy and scanning electron microscopy, spectroscopic ellipsometry and C-V and I-V measurements of MIS structures. High permittivity dielectric layers were deposited using atomic layer deposition. Investigation showed high value of κ = 15 and existence of high density surface states (5 × 10^{12} eV^{-1} cm^{-2}) on HfO_2/SiC interface. High leakage current is caused probably due to low conduction band offset between hafnium oxide and silicon carbide.

Keywords

EN

77.55.dj; 77.22.Jp; 73.40.Qv; 81.15.Gh

Discipline

• 81.15.Gh: Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)(for chemistry of MOCVD, see 82.33.Ya in physical chemistry and chemical physics)
• 77.22.Jp: Dielectric breakdown and space-charge effects(for dielectric breakdown in gases, see 51.50.+v)
• 73.40.Qv: Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
• 77.55.dj: For nonsilicon electronics (Ge, III-V, II-VI, organic electronics)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2011
• Volume: 119
• Issue: 5
• Pages: 696-698

Dates

published

2011-05

Contributors

author

A. Taube

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland
• Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw, Poland

author

S. Gierałtowska

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

author

T. Gutt

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland

author

T. Małachowski

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland

author

I. Pasternak

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland

author

T. Wojciechowski

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

author

W. Rzodkiewicz

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland

author

M. Sawicki

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

author

A. Piotrowska

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland

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Identifiers

DOI

10.12693/APhysPolA.119.696