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2011 | 119 | 5 | 696-698
Article title

Electronic Properties of Thin HfO_2 Films Fabricated by Atomic Layer Deposition on 4H-SiC

Content
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Languages of publication
EN
Abstracts
EN
Applicability of thin HfO_2 films as gate dielectric for SiC MOSFET transistor is reported. Layers characterisation was done by means of atomic force microscopy and scanning electron microscopy, spectroscopic ellipsometry and C-V and I-V measurements of MIS structures. High permittivity dielectric layers were deposited using atomic layer deposition. Investigation showed high value of κ = 15 and existence of high density surface states (5 × 10^{12} eV^{-1} cm^{-2}) on HfO_2/SiC interface. High leakage current is caused probably due to low conduction band offset between hafnium oxide and silicon carbide.
Keywords
Year
Volume
119
Issue
5
Pages
696-698
Physical description
Dates
published
2011-05
References
  • 1. Y. Hijikata, H. Yaguchi, S. Yoshida, Y. Takata, K. Kobayashi, H. Nohira, T. Hattori, J. Appl. Phys. 100, 053710 (2006)
  • 2. K.Y. Cheong, J.H. Moon, D. Eom, H.J. Kim, W. Bahng, N.-K. Kim, Electrochem. Solid State Lett. 10, H69 (2007)
  • 3. M. Avice, U. Grossner, I. Pintilie, B.G. Svensson, M. Servidori, R. Nipoti, O. Nilsen, H. Fjellvåg, J. Appl. Phys. 102, 054513 (2007)
  • 4. S.M. Sze, Physics of Semiconductor Devices, 2nd ed., Wiley, New York 1981, p. 402
  • 5. M. Wolborski, M. Rooth, M. Bakowski, A. Hallén, J. Appl. Phys. 101, 124105 (2005)
  • 6. E.H. Nicolian, A. Goetzberger, Bell Sys. Techn. J. 46, 1055 (1967)
  • 7. N. Kwietniewski, K. Gołaszewska, T.T. Piotrowski, W. Rzodkiewicz, T. Gutt, M. Sochacki, J. Szmidt, A. Piotrowska, Mater. Sci. Forum 615-617, 529 (2009)
  • 8. M. Noborio, J. Suda, S. Beljakowa, M. Krieger, T. Kimoto, in: Silicon Carbide, Vol. 2, Power Devices and Sensors, Eds. P. Friedrichs, T. Kimoto, L. Ley, G. Pensl, Wiley, Weinheim 2010, p. 235
Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv119n538kz
Identifiers
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