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2011 | 119 | 5 | 696-698
Article title

Electronic Properties of Thin HfO_2 Films Fabricated by Atomic Layer Deposition on 4H-SiC

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EN
Abstracts
EN
Applicability of thin HfO_2 films as gate dielectric for SiC MOSFET transistor is reported. Layers characterisation was done by means of atomic force microscopy and scanning electron microscopy, spectroscopic ellipsometry and C-V and I-V measurements of MIS structures. High permittivity dielectric layers were deposited using atomic layer deposition. Investigation showed high value of κ = 15 and existence of high density surface states (5 × 10^{12} eV^{-1} cm^{-2}) on HfO_2/SiC interface. High leakage current is caused probably due to low conduction band offset between hafnium oxide and silicon carbide.
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Contributors
author
  • Institute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland
  • Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw, Poland
  • Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland
author
  • Institute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland
  • Institute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland
author
  • Institute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland
  • Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland
  • Institute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland
author
  • Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland
author
  • Institute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland
References
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Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv119n538kz
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