PL EN


Preferences help
enabled [disable] Abstract
Number of results
2011 | 119 | 5 | 692-695
Article title

Properties and Characterization of ALD Grown Dielectric Oxides for MIS Structures

Content
Title variants
Languages of publication
EN
Abstracts
EN
We report on an extensive structural and electrical characterization of undergate dielectric oxide insulators Al_2O_3 and HfO_2 grown by atomic layer deposition. We elaborate the atomic layer deposition growth window for these oxides, finding that the 40-100 nm thick layers of both oxides exhibit fine surface flatness and required amorphous structure. These layers constitute a base for further metallic gate evaporation to complete the metal-insulator-semiconductor structure. Our best devices survive energizing up to ≈ 3 MV/cm at 77 K with the leakage current staying below the state-of-the-art level of 1 nA. At these conditions the displaced charge corresponds to a change of the sheet carrier density of 3 × 10^{13} cm^{-2}, which promises an effective modulation of the micromagnetic properties in diluted ferromagnetic semiconductors.
Keywords
Year
Volume
119
Issue
5
Pages
692-695
Physical description
Dates
published
2011-05
References
  • 1. H. Ohno, D. Chiba, F. Matsukura, T. Omiya, E. Abe, T. Dietl, Y. Ohno, K. Ohtani, Nature 408, 944 (2000)
  • 2. M. J. Biercuk, D.J. Monsma, C.M. Marcus, J.S. Becker, R.G. Gordon, Appl. Phys. Lett. 83, 2405 (2003)
  • 3. C. Zhao, T. Witters, P. Breimer, J. Maes, M. Caymax, S. De Gendt, Microelectron. Eng. 84, 7 (2007)
  • 4. D. Chiba, F. Matsukura, H. Ohno, Appl. Phys. Lett. 89, 162505 (2006)
  • 5. M. Sawicki, D. Chiba, A. Korbecka, Y. Nishitani, F. Matsukura, J.A. Majewski, T. Dietl, H. Ohno, Nature Phys. 6, 22 (2010)
  • 6. T. Suntola, J. Antson, US Patent 4058430 (1977)
  • 7. O. Sneh, R.B. Clark-Phelps, A.R. Londergan, J. Winkler, T.E. Seidel, Thin Solid Films 402, 248 (2002)
  • 8. E. Guziewicz, I.A. Kowalik, M. Godlewski, K. Kopałko, V. Osinniy, A. Wójcik, S. Yatsunenko, E. Łusakowska, W. Paszkowicz, M. Guziewicz, J. Appl. Phys. 103, 033515 (2008)
  • 9. N. Huby, G. Tallarida, M. Kutrzeba, S. Ferrari, E. Guziewicz, L. Wachnicki, M. Godlewski, Microelectron. Eng. 85, 2442 (2008)
  • 10. G. Luka, T. Krajewski, L. Wachnicki, A. Szczepanik, J.D. Fidelus, A. Szczerbakow, E. Lusakowska, K. Kopalko, E. Guziewicz, M. Godlewski, Acta Phys. Pol. A 114, 1229 (2008)
  • 11. M. Godlewski, E. Guziewicz, J. Szade, A. Wojcik-Głodowska, Ł. Wachnicki, T. Krajewski, K. Kopalko, R. Jakieła, S. Yatsunenko, E. Przezdziecka, P. Kruszewski, N. Huby, G. Tallarida, S. Ferrari, Microelectron. Eng. 85, 2434 (2008)
  • 12. Y. Nishitani, D. Chiba, F. Matsukura, H. Ohno, J. Appl. Phys. 103, 07D139 (2008)
  • 13. M. Endo, D. Chiba, Y. Nishitani, F. Matsukura, H. Ohno, J. Supercond. Nov. Magn. 20, 409 (2007)
  • 14. P. Balk, J. Non-Cryst. Solids 187, 1 (1995)
Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv119n537kz
Identifiers
JavaScript is turned off in your web browser. Turn it on to take full advantage of this site, then refresh the page.