Journal
Article title
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Abstracts
We report on an extensive structural and electrical characterization of undergate dielectric oxide insulators Al_2O_3 and HfO_2 grown by atomic layer deposition. We elaborate the atomic layer deposition growth window for these oxides, finding that the 40-100 nm thick layers of both oxides exhibit fine surface flatness and required amorphous structure. These layers constitute a base for further metallic gate evaporation to complete the metal-insulator-semiconductor structure. Our best devices survive energizing up to ≈ 3 MV/cm at 77 K with the leakage current staying below the state-of-the-art level of 1 nA. At these conditions the displaced charge corresponds to a change of the sheet carrier density of 3 × 10^{13} cm^{-2}, which promises an effective modulation of the micromagnetic properties in diluted ferromagnetic semiconductors.
Discipline
- 77.84.Bw: Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
- 81.15.Gh: Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)(for chemistry of MOCVD, see 82.33.Ya in physical chemistry and chemical physics)
- 81.05.Ea: III-V semiconductors
- 77.55.-g: Dielectric thin films(see also 85.50.-n Dielectric, ferroelectric, and piezoelectric devices; for microelectronics applications, see 85.40.-e; for methods of film deposition, see 81.15.-z)
Journal
Year
Volume
Issue
Pages
692-695
Physical description
Dates
published
2011-05
Contributors
author
- Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warszawa, Poland
author
- Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warszawa, Poland
author
- Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warszawa, Poland
author
- Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warszawa, Poland
- Natural Sciences College of Science, Cardinal S. Wyszyński University, Warszawa, Poland
author
- Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warszawa, Poland
author
- Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warszawa, Poland
author
- Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warszawa, Poland
author
- Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warszawa, Poland
author
- Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warszawa, Poland
- Institute of Theoretical Physics, University of Warsaw, Warszawa, Poland
author
- Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warszawa, Poland
References
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- 5. M. Sawicki, D. Chiba, A. Korbecka, Y. Nishitani, F. Matsukura, J.A. Majewski, T. Dietl, H. Ohno, Nature Phys. 6, 22 (2010)
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- 10. G. Luka, T. Krajewski, L. Wachnicki, A. Szczepanik, J.D. Fidelus, A. Szczerbakow, E. Lusakowska, K. Kopalko, E. Guziewicz, M. Godlewski, Acta Phys. Pol. A 114, 1229 (2008)
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- 13. M. Endo, D. Chiba, Y. Nishitani, F. Matsukura, H. Ohno, J. Supercond. Nov. Magn. 20, 409 (2007)
- 14. P. Balk, J. Non-Cryst. Solids 187, 1 (1995)
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv119n537kz