Properties and Characterization of ALD Grown Dielectric Oxides for MIS Structures

S. Gierałtowska; D. Sztenkiel; E. Guziewicz; M. Godlewski; G. Łuka; B. Witkowski; Ł. Wachnicki; E. Łusakowska; T. Dietl; M. Sawicki

doi:10.12693/APhysPolA.119.692

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Acta Physica Polonica A

2011 | 119 | 5 | 692-695

Article title

Properties and Characterization of ALD Grown Dielectric Oxides for MIS Structures

Authors

S. Gierałtowska , D. Sztenkiel , E. Guziewicz , M. Godlewski , G. Łuka , B. Witkowski , Ł. Wachnicki , E. Łusakowska , T. Dietl , M. Sawicki

Content

http://przyrbwn.icm.edu.pl/APP/PDF/119/a119z5p37.pdf [remote]

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Abstracts

We report on an extensive structural and electrical characterization of undergate dielectric oxide insulators Al_2O_3 and HfO_2 grown by atomic layer deposition. We elaborate the atomic layer deposition growth window for these oxides, finding that the 40-100 nm thick layers of both oxides exhibit fine surface flatness and required amorphous structure. These layers constitute a base for further metallic gate evaporation to complete the metal-insulator-semiconductor structure. Our best devices survive energizing up to ≈ 3 MV/cm at 77 K with the leakage current staying below the state-of-the-art level of 1 nA. At these conditions the displaced charge corresponds to a change of the sheet carrier density of 3 × 10^{13} cm^{-2}, which promises an effective modulation of the micromagnetic properties in diluted ferromagnetic semiconductors.

Keywords

81.15.Gh 77.55.-g 77.84.Bw 81.05.Ea

Publisher

Institute of Physics, Polish Academy of Sciences

Journal

Acta Physica Polonica A

Year

2011

Volume

119

Issue

Pages

692-695

Physical description

Dates

published

2011-05

References

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Document Type

Publication order reference

YADDA identifier

bwmeta1.element.bwnjournal-article-appv119n537kz

Identifiers

DOI

10.12693/APhysPolA.119.692