Detector with High Internal Photocurrent Gain Based on ZnO:N

• Authors: L. Kosyachenko , G. Lashkarev , A. Ievtushenko , V. Lazorenko , V. Sklyarchuk , O. Sklyarchuk
• Languages of publication: EN

Abstracts

EN

The photoresponsive structures prepared by magnetron sputtering of ZnO:N on p-Si substrates followed by vacuum evaporation of semi-transparent Ni film on ZnO surface were investigated. The mentioned structures show high sensitivity that sharply enhances with increase of applied voltage. Under a bias 5 V, the responsivities at λ = 390 and 850 nm are equal to 210 A/W and 110 A/W which correspond to the quantum efficiencies of 655 and 165, respectively. It is suggested that the observed high response is attributed to internal gain in phototransistor structure containing Ni/n-ZnO Schottky contact as emitter junction and n-ZnO/p-Si heterostructure as collector junction.

Keywords

EN

81.05.Dz; 81.15.-z; 85.60.Dw

Discipline

• 85.60.Dw: Photodiodes; phototransistors; photoresistors
• 81.05.Dz: II-VI semiconductors
• 81.15.-z: Methods of deposition of films and coatings; film growth and epitaxy(for structure of thin films, see 68.55.-a; see also 85.40.Sz Deposition technology in microelectronics; for epitaxial dielectric films, see 77.55.Px)

• Journal: Acta Physica Polonica A
• Year: 2011
• Volume: 119
• Issue: 5
• Pages: 681-682

Dates

published

2011-05

Contributors

author

L. Kosyachenko

• Chernivtsi National University, 58012 Chernivtsi, Ukraine

author

G. Lashkarev

• Institute for Problems of Material Science, NASU, 03142 Kiev, Ukraine

author

A. Ievtushenko

• Institute for Problems of Material Science, NASU, 03142 Kiev, Ukraine

author

V. Lazorenko

• Institute for Problems of Material Science, NASU, 03142 Kiev, Ukraine

author

V. Sklyarchuk

• Chernivtsi National University, 58012 Chernivtsi, Ukraine

author

O. Sklyarchuk

• Chernivtsi National University, 58012 Chernivtsi, Ukraine

References

• 1. J.Y. Lee, Y.S. Choi, W.H. Choi, H.W. Yeom, Y.K. Yoon, J.H. Kim, S. Im, Thin Solid Films 420-21, 112 (2002)
• 2. I.-S. Jeong, Jae Hoon Kim, S. Im, Appl. Phys. Lett. 83, 2946 (2003)
• 3. C.H. Park, J.Y. Lee, S. Im, T.G. Kim, Nuclear Instrum. Methods Phys. Res. B 206, 432 (2003)
• 4. C.H. Park, I.S. Jeong, H.S. Bae, T.G. Kim, S. Im, Nuclear Instrum. Methods Phys. Res. B 216, 127 (2004)
• 5. H.X. Qi, Q.S. Li, B. Zhao, M.M. Zheng, X.S. Li, N. Zhang, Mater. Sci. Techn. 24, 1002 (2008)
• 6. G. Junfu, X. Jiachun, D. Li, H. Guanghong, L. Bixia, F. Zhuxi, Chinese J. Semicond. 27, 5 (2006)
• 7. A. Ievtushenko, G. Lashkarev, V. Lazorenko, V. Karpyna, V. Sichkovskyi, L. Kosyachenko, V. Sklyarchuk, V. Bosy, F. Korzhinski, A. Ulyashin, V. Khranovskyy, R. Yakimova, Acta Phys. Pol. A 114, 1123 (2008)
• 8. S.O. Kasap, Optoelectronics and Photonics Prentice-Hall, New Jersey 2001, p. 237
• 9. Ü. Özgür, Ya.I. Alivov, C. Liu, A. Teke, M.A. Reshchikov, S. Doğan, V. Avrutin, S.-J. Cho, H. Morkoç, J. Appl. Phys. 98, 041301 (2005)
• 10. S.J. Pearson, D.P. Norton, Y.W. Ifeo, T. Steiner, Prog. Mater. Sci. 50, 293 (2005)

Identifiers

DOI

10.12693/APhysPolA.119.681