Journal
Article title
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Abstracts
The photoresponsive structures prepared by magnetron sputtering of ZnO:N on p-Si substrates followed by vacuum evaporation of semi-transparent Ni film on ZnO surface were investigated. The mentioned structures show high sensitivity that sharply enhances with increase of applied voltage. Under a bias 5 V, the responsivities at λ = 390 and 850 nm are equal to 210 A/W and 110 A/W which correspond to the quantum efficiencies of 655 and 165, respectively. It is suggested that the observed high response is attributed to internal gain in phototransistor structure containing Ni/n-ZnO Schottky contact as emitter junction and n-ZnO/p-Si heterostructure as collector junction.
Discipline
- 85.60.Dw: Photodiodes; phototransistors; photoresistors
- 81.05.Dz: II-VI semiconductors
- 81.15.-z: Methods of deposition of films and coatings; film growth and epitaxy(for structure of thin films, see 68.55.-a; see also 85.40.Sz Deposition technology in microelectronics; for epitaxial dielectric films, see 77.55.Px)
Journal
Year
Volume
Issue
Pages
681-682
Physical description
Dates
published
2011-05
Contributors
author
- Chernivtsi National University, 58012 Chernivtsi, Ukraine
author
- Institute for Problems of Material Science, NASU, 03142 Kiev, Ukraine
author
- Institute for Problems of Material Science, NASU, 03142 Kiev, Ukraine
author
- Institute for Problems of Material Science, NASU, 03142 Kiev, Ukraine
author
- Chernivtsi National University, 58012 Chernivtsi, Ukraine
author
- Chernivtsi National University, 58012 Chernivtsi, Ukraine
References
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Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv119n533kz