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2011 | 119 | 5 | 681-682
Article title

Detector with High Internal Photocurrent Gain Based on ZnO:N

Content
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Languages of publication
EN
Abstracts
EN
The photoresponsive structures prepared by magnetron sputtering of ZnO:N on p-Si substrates followed by vacuum evaporation of semi-transparent Ni film on ZnO surface were investigated. The mentioned structures show high sensitivity that sharply enhances with increase of applied voltage. Under a bias 5 V, the responsivities at λ = 390 and 850 nm are equal to 210 A/W and 110 A/W which correspond to the quantum efficiencies of 655 and 165, respectively. It is suggested that the observed high response is attributed to internal gain in phototransistor structure containing Ni/n-ZnO Schottky contact as emitter junction and n-ZnO/p-Si heterostructure as collector junction.
Keywords
EN
Year
Volume
119
Issue
5
Pages
681-682
Physical description
Dates
published
2011-05
References
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Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv119n533kz
Identifiers
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