Pressure Dependence of Exciton Binding Energy in GaN/Al_{x}Ga_{1 - x}N Quantum Wells

• Authors: W. Bardyszewski , S. Łepkowski , H. Teisseyre
• Languages of publication: EN

Abstracts

EN

We present a theoretical study of excitons in GaN/Al_{x}Ga_{1 - x}N wurtzite (0001) quantum wells subjected to hydrostatic pressure. Our results show that the combined effect of pressure induced changes in band structure and piezoelectric field leads to reduction of the exciton binding energy. This subtle effect is described quite accurately by our multiband model of excitons in quantum wells.

Keywords

EN

78.40.Fy; 78.20.Bh; 78.30.Fs

Discipline

• 78.20.Bh: Theory, models, and numerical simulation
• 78.40.Fy: Semiconductors
• 78.30.Fs: III-V and II-VI semiconductors

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2011
• Volume: 119
• Issue: 5
• Pages: 663-665

Dates

published

2011-05

Contributors

author

W. Bardyszewski

• Institute of Theoretical Physics, Faculty of Physics, University of Warsaw, Hoża 69, 00-681 Warszawa, Poland

author

S. Łepkowski

• Institute of High Pressure Physics, "Unipress", Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warszawa, Poland

author

H. Teisseyre

• Institute of High Pressure Physics, "Unipress", Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warszawa, Poland
• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warszawa, Poland

References

• 1. S.P. Łepkowski, H. Teysseyre, T. Suski, P. Perlin, N. Grandjean, J. Massies, Appl. Phys. Lett. 79, 1483 (2001)
• 2. G. Vaschenko, D. Patel, C.S. Menoni, N.F. Gardner, J. Sunb, W. Gotz, C.B. Tome, B. Clausen, Phys. Rev. B 64, 241308 (2001)
• 3. S.P. Łepkowski, J.A. Majewski, G. Jurczak, Phys. Rev. B 72, 245201 (2005)
• 4. S.H. Ha, S.L. Ban, J. Phys., Condens. Matter 20, 085218 (2008)
• 5. M. Sobol, W. Bardyszewski, Phys. Rev. B 73, 075208 (2006)
• 6. S.-H. Park, S.L. Chuang, J. Appl. Phys. 87, 353 (2000)
• 7. B. Gil, Phys. Rev. B 81, 205201 (2010)

Identifiers

DOI

10.12693/APhysPolA.119.663