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2011 | 119 | 5 | 663-665
Article title

Pressure Dependence of Exciton Binding Energy in GaN/Al_{x}Ga_{1 - x}N Quantum Wells

Content
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Languages of publication
EN
Abstracts
EN
We present a theoretical study of excitons in GaN/Al_{x}Ga_{1 - x}N wurtzite (0001) quantum wells subjected to hydrostatic pressure. Our results show that the combined effect of pressure induced changes in band structure and piezoelectric field leads to reduction of the exciton binding energy. This subtle effect is described quite accurately by our multiband model of excitons in quantum wells.
Keywords
EN
Publisher

Year
Volume
119
Issue
5
Pages
663-665
Physical description
Dates
published
2011-05
Contributors
  • Institute of Theoretical Physics, Faculty of Physics, University of Warsaw, Hoża 69, 00-681 Warszawa, Poland
author
  • Institute of High Pressure Physics, "Unipress", Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warszawa, Poland
author
  • Institute of High Pressure Physics, "Unipress", Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warszawa, Poland
  • Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warszawa, Poland
References
  • 1. S.P. Łepkowski, H. Teysseyre, T. Suski, P. Perlin, N. Grandjean, J. Massies, Appl. Phys. Lett. 79, 1483 (2001)
  • 2. G. Vaschenko, D. Patel, C.S. Menoni, N.F. Gardner, J. Sunb, W. Gotz, C.B. Tome, B. Clausen, Phys. Rev. B 64, 241308 (2001)
  • 3. S.P. Łepkowski, J.A. Majewski, G. Jurczak, Phys. Rev. B 72, 245201 (2005)
  • 4. S.H. Ha, S.L. Ban, J. Phys., Condens. Matter 20, 085218 (2008)
  • 5. M. Sobol, W. Bardyszewski, Phys. Rev. B 73, 075208 (2006)
  • 6. S.-H. Park, S.L. Chuang, J. Appl. Phys. 87, 353 (2000)
  • 7. B. Gil, Phys. Rev. B 81, 205201 (2010)
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv119n527kz
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