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2011 | 119 | 5 | 660-662
Article title

Impact of Thin LT-GaN Cap Layers on the Structural and Compositional Quality of MOVPE Grown InGaN Quantum Wells Investigated by TEM

Content
Title variants
Languages of publication
EN
Abstracts
EN
Two samples containing InGaN quantum wells have been grown by metal-organic vapor phase epitaxy on high pressure grown monocrystalline GaN (0001). Different growth temperatures have been used to grow the wells and the barriers. In one of the samples, a low temperature GaN layer (730°C) has been grown on every quantum well before rising the temperature to standard values (900°C). The samples have been investigated by transmission electron microscopy and X-ray diffraction. Photoluminescence spectra have been measured as well. The influence of the LT-GaN has been investigated in regard to its influence on the structural and compositional quality of the sample.
Keywords
EN
Publisher

Year
Volume
119
Issue
5
Pages
660-662
Physical description
Dates
published
2011-05
Contributors
author
  • Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland
author
  • Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland
  • Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland
author
  • Institute of High Pressure Physics, Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warsaw, Poland
author
  • Institute of High Pressure Physics, Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warsaw, Poland
author
  • Institute of High Pressure Physics, Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warsaw, Poland
  • Institute of High Pressure Physics, Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warsaw, Poland
References
  • 1. Gatan Inc. - Manual: Precision Ion Polishing System: Cold Stage Upgrade, 2008
  • 2. S. Kret, P. Dluzewski, A. Szczepanska, M. Zak, R. Czernecki, M. Krysko, M. Leszczynski, G. Maciejewski, Nanotechnology 18, 465707 (2007)
  • 3. S. Kret, P. Ruterana, D. Gerthseni, Phys. Status Solidi B 227, 247 (2001)
  • 4. S. Kret, F. Ivaldi, K. Sobczak, R. Czernecki, M. Leszczynski, Phys. Status Solidi A 207, 1101 (2010)
  • 5. R.A. Oliver, M.J. Kappers, C.J. Humphreysi, Phys. Status Solidi C 5, 1475 (2008)
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv119n526kz
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